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2SB772SQ

Public Made by Adom

by adom

JUXING Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sb772sqfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SB772SQ

JUXING · Bipolar (BJT) · SOT-89

2SB772SQ from JUXING, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the PNP transistor; continuous base current is rated at -IB 0.6 A in the absolute maximum ratings.
2 Collector passive Collector terminal; continuous collector current is rated at -IC 3 A and peak collector current at -ICP 7 A, with -VCBO 40 V and -VCEO 30 V.
3 E passive Emitter terminal; emitter-to-base voltage is rated at -VEBO 5 V in the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer JUXING
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage -VCBO 40 V 1
Collector to Emitter Voltage -VCEO 30 V 1
Emitter to Base Voltage -VEBO 5 V 1
Collector Current-Continuous -IC 3 A 1
Peak Collector Current -ICP 7 A 1
Base Current - Continuous -IB 0.6 A 1
Total Power Dissipation PD 1 W 1
Total Power Dissipation (Tc=25℃) PD 10 W Tc=25℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
DC Current Gain (at -IC = 20 mA, group unspecified) hFE 30 at -VCE = 2 V, -IC = 20 mA 2
DC Current Gain Group R hFE 60 120 at -VCE = 2 V, -IC = 1 A, Current Gain Group R 2
DC Current Gain Group Q hFE 100 200 at -VCE = 2 V, -IC = 1 A, Current Gain Group Q 2
DC Current Gain Group P hFE 160 320 at -VCE = 2 V, -IC = 1 A, Current Gain Group P 2
DC Current Gain Group E hFE 200 400 at -VCE = 2 V, -IC = 1 A, Current Gain Group E 2
Collector Base Cutoff Current -ICBO 1 µA at -VCB = 30 V 2
Emitter Base Cutoff Current -IEBO 1 µA at -VEB = 3 V 2
Collector Base Breakdown Voltage -V(BR)CBO 40 V at -IC = 1 mA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 30 V at -IC = 1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at -IE = 1 mA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.5 V at -IC = 2 A, -IB = 200 mA 2
Base Emitter Saturation Voltage -VBE(sat) 2 V at -IC = 2 A, -IB = 200 mA 2

CAD (KiCad official)

  • Symbol: 2SB772SQ
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sb772sq-etched.step / 2sb772sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb772sq.step / 2sb772sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JUXING datasheet (2 pp, sha256 b86dd2d826e49b2c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF