# 2SB1197-Q

**Yangzhou Yangjie Elec Tech** · Bipolar (BJT) · SOT-23

2SB1197-Q from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives VEBO of -5 V maximum and IEBO of -0.5 uA maximum at VEB=-4 V. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet gives VEBO of -5 V maximum with the emitter-base reverse voltage. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet gives IC of -800 mA, VCBO of -40 V and VCEO of -32 V maximum, with 200 mW collector power dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -40 | V | IC=-50uAdc, IE=0 | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -32 | V | IC=-1mAdc, IB=0 | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V | IE=-50uAdc, IC=0 | 1 |
| Collector Current | IC |  |  | -800 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 200 | mW |  | 1 |
| Operation Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | VCBO | -40 |  |  | V | IC=-50uA,IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO | -32 |  |  | V | IC=-1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | VEBO | -5 |  |  | V | IE=-50μA,IC=0 | 1 |
| Collector-base cut-off current | ICBO |  |  | -0.5 | uA | VCB=-20V, IE=0 | 1 |
| Emitter-base cut-off current | IEBO |  |  | -0.5 | uA | VEB=-4V, IC=0 | 1 |
| DC current gain (rank Q) | hFE | 120 |  | 270 |  | VCE=-3V,IC=-100mA; rank Q range 120-270 per classification table | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.5 | V | IC=-500mA,IB=-50mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-5V,IE=50mA,f=100MHz | 1 |
| Collector-base output capacitance | Cob |  |  | 30 | pF | VCB=-10V,f=1MHz | 1 |

## CAD (KiCad official)

- Symbol: `2SB1197-Q`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2sb1197-q-etched.step` / `2sb1197-q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb1197-q.step` / `2sb1197-q.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916929650438144) (5 pp, sha256 `5a71e76edaf1889c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sb1197-q-datasheet.pdf)