component
2SB1197-Q
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sb1197-q-etched.glb | 6d ago |
| 2sb1197-q-etched.step | 6d ago |
| 2sb1197-q-hero.glb | 6d ago |
| 2sb1197-q-hero.overlay.json | 6d ago |
| 2sb1197-q.glb | 6d ago |
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| 2sb1197-q.lbr | 6d ago |
| 2sb1197-q.step | 6d ago |
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| README.md | 6d ago |
2SB1197-Q
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23
2SB1197-Q from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives VEBO of -5 V maximum and IEBO of -0.5 uA maximum at VEB=-4 V. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet gives VEBO of -5 V maximum with the emitter-base reverse voltage. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet gives IC of -800 mA, VCBO of -40 V and VCEO of -32 V maximum, with 200 mW collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | IC=-50uAdc, IE=0 | 1 | ||
| Collector-Emitter Voltage | VCEO | -32 | V | IC=-1mAdc, IB=0 | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | IE=-50uAdc, IC=0 | 1 | ||
| Collector Current | IC | -800 | mA | 1 | |||
| Collector Power Dissipation | PC | 200 | mW | 1 | |||
| Operation Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | VCBO | -40 | V | IC=-50uA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | -32 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE=-50μA,IC=0 | 1 | ||
| Collector-base cut-off current | ICBO | -0.5 | uA | VCB=-20V, IE=0 | 1 | ||
| Emitter-base cut-off current | IEBO | -0.5 | uA | VEB=-4V, IC=0 | 1 | ||
| DC current gain (rank Q) | hFE | 120 | 270 | VCE=-3V,IC=-100mA; rank Q range 120-270 per classification table | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-500mA,IB=-50mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-5V,IE=50mA,f=100MHz | 1 | ||
| Collector-base output capacitance | Cob | 30 | pF | VCB=-10V,f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
2SB1197-Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sb1197-q-etched.step/2sb1197-q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1197-q.step/2sb1197-q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
5a71e76edaf1889c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).