# 2SB1116

**Changjing** · Bipolar (BJT) · SOT-23

2SB1116 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies base drive as IB = -50 mA for the stated saturation condition IC = -1 A, with VBE(sat) up to -1.2 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown is specified at -6 V minimum (VEBO rating -6 V) with IE = -100 µA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated for a collector-base voltage of -60 V (VCBO), collector-emitter voltage of -50 V (VCEO), and continuous collector current of -1 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | -60 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -50 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -6 | V |  | 1 |
| Collector current, continuous | IC |  |  | -1 | A |  | 1 |
| Collector power dissipation | PC |  |  | 0.35 | W |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -60 |  |  | V | IC=-100μA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -50 |  |  | V | IC=-1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -6 |  |  | V | IE=-100μA,IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | μA | VCB=-60V,IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -0.1 | μA | VEB=-6V,IC=0 | 1 |
| DC current gain | hFE(1) | 135 |  | 600 |  | VCE=-2V,IC=-0.1A | 1 |
| DC current gain | hFE(2) | 81 |  |  |  | VCE=-2V,IC=-1A | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.3 | V | IC=-1A,IB=-50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.2 | V | IC=-1A,IB=-50mA | 1 |
| Base-emitter voltage | VBE | -0.6 | -0.7 |  | V | VCE=-2V,IC=-0.05A | 1 |
| Transition frequency | fT | 70 |  |  | MHz | VCE=-2V,IC=-0.1A | 1 |
| Collector output capacitance | Cob |  |  | 25 | pF | VCB=-10V,IE=0,f=1MHz | 1 |
| Turn-on time | ton |  |  | 0.07 | us |  | 1 |
| Storage time | ts |  |  | 0.7 | us |  | 1 |
| Fall time | tf |  |  | 0.07 | us | VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,VBE(Off)=2to3V | 1 |

## CAD (KiCad official)

- Symbol: `2SB1116`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2sb1116-etched.step` / `2sb1116-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb1116.step` / `2sb1116.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954725723353088) (4 pp, sha256 `0f99db31b3ecf751`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sb1116-datasheet.pdf)