component
2SB1116
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SB1116
Changjing · Bipolar (BJT) · SOT-23
2SB1116 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies base drive as IB = -50 mA for the stated saturation condition IC = -1 A, with VBE(sat) up to -1.2 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown is specified at -6 V minimum (VEBO rating -6 V) with IE = -100 µA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated for a collector-base voltage of -60 V (VCBO), collector-emitter voltage of -50 V (VCEO), and continuous collector current of -1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -6 | V | 1 | |||
| Collector current, continuous | IC | -1 | A | 1 | |||
| Collector power dissipation | PC | 0.35 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-100μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-60V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-6V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 135 | 600 | VCE=-2V,IC=-0.1A | 1 | ||
| DC current gain | hFE(2) | 81 | VCE=-2V,IC=-1A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-1A,IB=-50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-1A,IB=-50mA | 1 | ||
| Base-emitter voltage | VBE | -0.6 | -0.7 | V | VCE=-2V,IC=-0.05A | 1 | |
| Transition frequency | fT | 70 | MHz | VCE=-2V,IC=-0.1A | 1 | ||
| Collector output capacitance | Cob | 25 | pF | VCB=-10V,IE=0,f=1MHz | 1 | ||
| Turn-on time | ton | 0.07 | us | 1 | |||
| Storage time | ts | 0.7 | us | 1 | |||
| Fall time | tf | 0.07 | us | VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,VBE(Off)=2to3V | 1 |
CAD (KiCad official)
- Symbol:
2SB1116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sb1116-etched.step/2sb1116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1116.step/2sb1116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
0f99db31b3ecf751, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).