# 2SAR523EBTL

**ROHM Semicon** · Bipolar (BJT) · SOT-416

2SAR523EBTL from ROHM Semicon, in a SOT-416. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; VEBO max -5V and DC current gain hFE 120 to 560 at VCE = -6V, IC = -1mA. |
| 2 | Emitter | passive | Emitter of the PNP transistor; emitter-base breakdown voltage BVEBO min -5V at IE = -50uA. |
| 3 | Collector | passive | Collector of the PNP transistor; VCEO -50V, VCBO -50V, IC -100mA continuous and ICP -200mA pulsed (Pw=10ms single pulse). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-416 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | -50 | V |  | 2 |
| Collector-emitter voltage | VCEO |  |  | -50 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | -5 | V |  | 2 |
| Collector current | IC |  |  | -100 | mA |  | 2 |
| Collector current (pulse) | ICP |  |  | -200 | mA | Pw=10ms Single Pulse | 2 |
| Power dissipation (2SAR523EB) | PD |  |  | 150 | mW | Each terminal mounted on a reference land | 2 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Range of storage temperature | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-base breakdown voltage | BVCBO | -50 |  |  | V | IC = -50μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | -50 |  |  | V | IC = -1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | -5 |  |  | V | IE = -50μA | 2 |
| Collector cut-off current | ICBO |  |  | -100 | nA | VCB = -50V | 2 |
| Emitter cut-off current | IEBO |  |  | -100 | nA | VEB = -5V | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | -150 | -400 | mV | IC = -50mA, IB = -5mA | 2 |
| DC current gain | hFE | 120 |  | 560 | - | VCE = -6V, IC = -1mA | 2 |

## CAD (KiCad official)

- Symbol: `2SAR523EBTL`
- Footprint: `Package_TO_SOT_SMD:SOT-416`
- 3D model: SOT-416 (KiCad packages3D, STEP)
- 3D model files: `2sar523ebtl-etched.step` / `2sar523ebtl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sar523ebtl.step` / `2sar523ebtl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912187566276608) (11 pp, sha256 `f76845f389d9f306`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sar523ebtl-datasheet.pdf)