component
2SAR523EBTL
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-416. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sar523ebtl-etched.glb | 6d ago |
| 2sar523ebtl-etched.step | 6d ago |
| 2sar523ebtl-hero.glb | 6d ago |
| 2sar523ebtl.glb | 6d ago |
| 2sar523ebtl.kicad_mod | 6d ago |
| 2sar523ebtl.kicad_sym | 6d ago |
| 2sar523ebtl.lbr | 6d ago |
| 2sar523ebtl.step | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SAR523EBTL
ROHM Semicon · Bipolar (BJT) · SOT-416
2SAR523EBTL from ROHM Semicon, in a SOT-416. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; VEBO max -5V and DC current gain hFE 120 to 560 at VCE = -6V, IC = -1mA. |
| 2 | Emitter | passive | Emitter of the PNP transistor; emitter-base breakdown voltage BVEBO min -5V at IE = -50uA. |
| 3 | Collector | passive | Collector of the PNP transistor; VCEO -50V, VCBO -50V, IC -100mA continuous and ICP -200mA pulsed (Pw=10ms single pulse). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-416 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -50 | V | 2 | |||
| Collector-emitter voltage | VCEO | -50 | V | 2 | |||
| Emitter-base voltage | VEBO | -5 | V | 2 | |||
| Collector current | IC | -100 | mA | 2 | |||
| Collector current (pulse) | ICP | -200 | mA | Pw=10ms Single Pulse | 2 | ||
| Power dissipation (2SAR523EB) | PD | 150 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | BVCBO | -50 | V | IC = -50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -50 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE = -50μA | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -50V | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -5V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -150 | -400 | mV | IC = -50mA, IB = -5mA | 2 | |
| DC current gain | hFE | 120 | 560 | - | VCE = -6V, IC = -1mA | 2 |
CAD (KiCad official)
- Symbol:
2SAR523EBTL - Footprint:
Package_TO_SOT_SMD:SOT-416 - 3D model: SOT-416 (KiCad packages3D, STEP)
- 3D model files:
2sar523ebtl-etched.step/2sar523ebtl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sar523ebtl.step/2sar523ebtl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (11 pp, sha256
f76845f389d9f306, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).