# 2SA2029M3T5G

**onsemi** · Bipolar Transistors - BJT · SOT-723

2SA2029M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies base drive for saturation as IB = −5.0 mAdc at IC = −50 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is −6.0 Vdc minimum. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates collector-emitter voltage V(BR)CEO at −50 Vdc and continuous collector current IC at −100 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 |  |  | Vdc | IC = −50 Adc, IE = 0 | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -50 |  |  | Vdc | IC = −1.0 mAdc, IB = 0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -6 |  |  | Vdc | IE = −50 Adc, IE = 0 | 2 |
| Collector-Base Cutoff Current | ICBO |  |  | -0.5 | nA | VCB = −30 Vdc, IE = 0 | 2 |
| Emitter-Base Cutoff Current | IEBO |  |  | -0.1 | A | VEB = −7.0 Vdc, IB = 0 | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.5 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 |
| DC Current Gain | hFE | 120 |  | 560 |  | VCE = −6.0 Vdc, IC = −1.0 mAdc | 2 |
| Collector-Base Voltage | V(BR)CBO |  |  | -60 | Vdc |  | 1 |
| Collector-Emitter Voltage | V(BR)CEO |  |  | -50 | Vdc |  | 1 |
| Emitter-Base Voltage | V(BR)EBO |  |  | -6 | Vdc |  | 1 |
| Collector Current - Continuous | IC |  |  | -100 | mAdc |  | 1 |
| Power Dissipation | PD |  |  | 265 | mW | Note 1: device mounted on FR-4 glass epoxy PCB using minimum recommended footprint | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `2SA2029M3T5G`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files: `2sa2029m3t5g-etched.step` / `2sa2029m3t5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa2029m3t5g.step` / `2sa2029m3t5g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/2sa2029m3t5-d.pdf) (6 pp, sha256 `2f456dfc1f1c8e9c`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sa2029m3t5g-datasheet.pdf)