component
2SA2029M3T5G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| 2sa2029m3t5g-etched.glb | 3d ago |
| 2sa2029m3t5g-etched.step | 3d ago |
| 2sa2029m3t5g-hero.glb | 3d ago |
| 2sa2029m3t5g-hero.overlay.json | 3d ago |
| 2sa2029m3t5g.glb | 3d ago |
| 2sa2029m3t5g.kicad_mod | 3d ago |
| 2sa2029m3t5g.kicad_sym | 3d ago |
| 2sa2029m3t5g.lbr | 3d ago |
| 2sa2029m3t5g.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
2SA2029M3T5G
onsemi · Bipolar Transistors - BJT · SOT-723
2SA2029M3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies base drive for saturation as IB = −5.0 mAdc at IC = −50 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is −6.0 Vdc minimum. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates collector-emitter voltage V(BR)CEO at −50 Vdc and continuous collector current IC at −100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | Vdc | IC = −50 Adc, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -50 | Vdc | IC = −1.0 mAdc, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -6 | Vdc | IE = −50 Adc, IE = 0 | 2 | ||
| Collector-Base Cutoff Current | ICBO | -0.5 | nA | VCB = −30 Vdc, IE = 0 | 2 | ||
| Emitter-Base Cutoff Current | IEBO | -0.1 | A | VEB = −7.0 Vdc, IB = 0 | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 | ||
| DC Current Gain | hFE | 120 | 560 | VCE = −6.0 Vdc, IC = −1.0 mAdc | 2 | ||
| Collector-Base Voltage | V(BR)CBO | -60 | Vdc | 1 | |||
| Collector-Emitter Voltage | V(BR)CEO | -50 | Vdc | 1 | |||
| Emitter-Base Voltage | V(BR)EBO | -6 | Vdc | 1 | |||
| Collector Current - Continuous | IC | -100 | mAdc | 1 | |||
| Power Dissipation | PD | 265 | mW | Note 1: device mounted on FR-4 glass epoxy PCB using minimum recommended footprint | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SA2029M3T5G - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files:
2sa2029m3t5g-etched.step/2sa2029m3t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa2029m3t5g.step/2sa2029m3t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
2f456dfc1f1c8e9c, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).