component

2SA1962OTU

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor2sa1962otufactory-2.0.0extractor-text
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2SA1962OTU

onsemi · Bipolar Transistors - BJT · TO-3P

2SA1962OTU from onsemi, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the PNP transistor; the datasheet rates base current IB at -1.5 A.
2 Collector passive Collector terminal; the datasheet rates collector current IC at -17 A and collector-emitter voltage VCEO at -250 V.
3 Emitter passive Emitter terminal; the datasheet rates emitter-base voltage BVEBO at -5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-3P
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -250 V IC=-5mA, IE=0 3
Collector-Emitter Breakdown Voltage BVCEO -250 V IC=-10mA, RBE=∞ 3
Emitter-Base Breakdown Voltage BVEBO -5 V IE=-5mA, IC=0 3
Collector Cut-off Current ICBO -5 µA VCB=-230V, IE=0 3
Emitter Cut-off Current IEBO -5 µA VEB=-5V, IC=0 3
DC Current Gain (O grade) hFE1 80 160 VCE=-5V, IC=-1A 2
DC Current Gain hFE1 55 160 VCE=-5V, IC=-1A 3
DC Current Gain hFE2 35 60 VCE=-5V, IC=-7A 3
Collector-Emitter Saturation Voltage VCE(sat) -0.4 -3 V IC=-8A, IB=-0.8A 3
Base-Emitter On Voltage VBE(on) -1 -1.5 V VCE=-5V, IC=-7A 3
Current Gain Bandwidth Product fT 30 MHz VCE=-5V, IC=-1A 3
Output Capacitance Cob 360 pF VCB=-10V, f=1MHz 3
Collector-Base Voltage BVCBO -250 V Ta = 25°C 2
Collector-Emitter Voltage BVCEO -250 V Ta = 25°C 2
Emitter-Base Voltage BVEBO -5 V Ta = 25°C 2
Collector Current IC -17 A Ta = 25°C 2
Base Current IB -1.5 A Ta = 25°C 2
Total Device Dissipation PD 130 W TC=25°C 2
Derating above 25°C PD 1.04 W/°C Derate above 25°C 2
Junction and Storage Temperature TJ, TSTG -50 150 °C 2
Thermal Resistance, Junction to Case RθJC 0.96 °C/W 2

CAD (KiCad official)

  • Symbol: 2SA1962OTU
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: 2sa1962otu-etched.step / 2sa1962otu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1962otu.step / 2sa1962otu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 ff52a44c53e5a733, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF