component
2SA1962OTU
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1962OTU
onsemi · Bipolar Transistors - BJT · TO-3P
2SA1962OTU from onsemi, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; the datasheet rates base current IB at -1.5 A. |
| 2 | Collector | passive | Collector terminal; the datasheet rates collector current IC at -17 A and collector-emitter voltage VCEO at -250 V. |
| 3 | Emitter | passive | Emitter terminal; the datasheet rates emitter-base voltage BVEBO at -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-3P |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -250 | V | IC=-5mA, IE=0 | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -250 | V | IC=-10mA, RBE=∞ | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE=-5mA, IC=0 | 3 | ||
| Collector Cut-off Current | ICBO | -5 | µA | VCB=-230V, IE=0 | 3 | ||
| Emitter Cut-off Current | IEBO | -5 | µA | VEB=-5V, IC=0 | 3 | ||
| DC Current Gain (O grade) | hFE1 | 80 | 160 | VCE=-5V, IC=-1A | 2 | ||
| DC Current Gain | hFE1 | 55 | 160 | VCE=-5V, IC=-1A | 3 | ||
| DC Current Gain | hFE2 | 35 | 60 | VCE=-5V, IC=-7A | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | -3 | V | IC=-8A, IB=-0.8A | 3 | |
| Base-Emitter On Voltage | VBE(on) | -1 | -1.5 | V | VCE=-5V, IC=-7A | 3 | |
| Current Gain Bandwidth Product | fT | 30 | MHz | VCE=-5V, IC=-1A | 3 | ||
| Output Capacitance | Cob | 360 | pF | VCB=-10V, f=1MHz | 3 | ||
| Collector-Base Voltage | BVCBO | -250 | V | Ta = 25°C | 2 | ||
| Collector-Emitter Voltage | BVCEO | -250 | V | Ta = 25°C | 2 | ||
| Emitter-Base Voltage | BVEBO | -5 | V | Ta = 25°C | 2 | ||
| Collector Current | IC | -17 | A | Ta = 25°C | 2 | ||
| Base Current | IB | -1.5 | A | Ta = 25°C | 2 | ||
| Total Device Dissipation | PD | 130 | W | TC=25°C | 2 | ||
| Derating above 25°C | PD | 1.04 | W/°C | Derate above 25°C | 2 | ||
| Junction and Storage Temperature | TJ, TSTG | -50 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.96 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
2SA1962OTU - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
2sa1962otu-etched.step/2sa1962otu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1962otu.step/2sa1962otu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
ff52a44c53e5a733, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).