# 2SA1952TLQ

**ROHM Semicon** · Bipolar (BJT) · TO-252-2(DPAK)

2SA1952TLQ from ROHM Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the datasheet gives no separate pin-level limit, and the device limits are VEBO −5 V and IC −5 A DC (−10 A pulse). |
| 2 | Collector | passive | Collector terminal; absolute maximum ratings are VCBO −100 V, VCEO −60 V, IC −5 A DC (−10 A pulse), and collector power dissipation of 1 W and 10 W (Tc=25°C). |
| 3 | Emitter | passive | Emitter terminal; the datasheet gives VEBO −5 V as the emitter-base breakdown limit, with junction temperature up to 150°C and storage −55 to +150°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -100 |  |  | V | IC = −50µA | 1 |
| Collector-emitter breakdown voltage | BVCEO | -60 |  |  | V | IC = −1mA | 1 |
| Emitter-base breakdown voltage | BVEBO | -5 |  |  | V | IE = −50µA | 1 |
| Collector cutoff current | ICBO |  |  | -10 | µA | VCB = −100V | 1 |
| Emitter cutoff current | IEBO |  |  | -10 | µA | VEB = −5V | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.3 | V | IC/IB = −3A/−0.15A | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.5 | V | IC/IB = −4A/−0.2A | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.2 | V | IC/IB = −3A/−0.15A | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.5 | V | IC/IB = −4A/−0.2A | 1 |
| DC current transfer ratio | hFE | 130 |  | 270 |  | VCE = −2V, IC = −1A | 1 |
| Turn-on time | ton |  |  | 0.3 | µs | IC = −3A, RL = 10Ω | 1 |
| Storage time | tstg |  |  | 1.5 | µs | IB1 = −IB2 = −0.15A | 1 |
| Fall time | tf |  |  | 0.3 | µs | VCC −30V | 1 |
| Collector-base voltage | VCBO |  |  | -100 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -60 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector current | IC |  |  | -5 | A |  | 1 |
| Collector current (pulse) | IC |  |  | -10 | A | Pulse | 1 |
| Collector power dissipation | PC |  |  | 1 | W |  | 1 |
| Collector power dissipation | PC |  |  | 10 | W | Tc = 25°C | 1 |
| Junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Transition frequency | fT |  | 120 |  | MHz | VCE = −10V, IE = 0.5A, f = 30MHz | 1 |
| Output capacitance | Cob |  | 80 |  | pF | VCB = −10V, IE = 0A, f = 1MHz | 1 |

## CAD (KiCad official)

- Symbol: `2SA1952TLQ`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `2sa1952tlq-etched.step` / `2sa1952tlq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa1952tlq.step` / `2sa1952tlq.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176461883916288) (1 pp, sha256 `6dae8b0581f9002b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sa1952tlq-datasheet.pdf)