component
2SA1952TLQ
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1952TLQ
ROHM Semicon · Bipolar (BJT) · TO-252-2(DPAK)
2SA1952TLQ from ROHM Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the datasheet gives no separate pin-level limit, and the device limits are VEBO −5 V and IC −5 A DC (−10 A pulse). |
| 2 | Collector | passive | Collector terminal; absolute maximum ratings are VCBO −100 V, VCEO −60 V, IC −5 A DC (−10 A pulse), and collector power dissipation of 1 W and 10 W (Tc=25°C). |
| 3 | Emitter | passive | Emitter terminal; the datasheet gives VEBO −5 V as the emitter-base breakdown limit, with junction temperature up to 150°C and storage −55 to +150°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -100 | V | IC = −50µA | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | -60 | V | IC = −1mA | 1 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE = −50µA | 1 | ||
| Collector cutoff current | ICBO | -10 | µA | VCB = −100V | 1 | ||
| Emitter cutoff current | IEBO | -10 | µA | VEB = −5V | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC/IB = −3A/−0.15A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC/IB = −4A/−0.2A | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC/IB = −3A/−0.15A | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.5 | V | IC/IB = −4A/−0.2A | 1 | ||
| DC current transfer ratio | hFE | 130 | 270 | VCE = −2V, IC = −1A | 1 | ||
| Turn-on time | ton | 0.3 | µs | IC = −3A, RL = 10Ω | 1 | ||
| Storage time | tstg | 1.5 | µs | IB1 = −IB2 = −0.15A | 1 | ||
| Fall time | tf | 0.3 | µs | VCC −30V | 1 | ||
| Collector-base voltage | VCBO | -100 | V | 1 | |||
| Collector-emitter voltage | VCEO | -60 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -5 | A | 1 | |||
| Collector current (pulse) | IC | -10 | A | Pulse | 1 | ||
| Collector power dissipation | PC | 1 | W | 1 | |||
| Collector power dissipation | PC | 10 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE = −10V, IE = 0.5A, f = 30MHz | 1 | ||
| Output capacitance | Cob | 80 | pF | VCB = −10V, IE = 0A, f = 1MHz | 1 |
CAD (KiCad official)
- Symbol:
2SA1952TLQ - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
2sa1952tlq-etched.step/2sa1952tlq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1952tlq.step/2sa1952tlq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (1 pp, sha256
6dae8b0581f9002b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).