component
2SA1163-GR
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SA1163-GR
TOSHIBA · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SA1163-GR from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max is −5 V and base current IB max is −20 mA. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage VEBO max is −5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO and VCEO are −120 V max and collector current IC is −100 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | -0.1 | µA | VCB = −120 V, IE = 0 A | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB = −5 V, IC = 0 A | 2 | ||
| DC current gain (GR classification) | hFE | 200 | 400 | VCE = −6 V, IC = −2 mA; GR (G): 200 to 400 | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC = −10 mA, IB = −1 mA | 2 | ||
| Noise figure | NF | 1 | 10 | dB | VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ | 2 | |
| Collector-base voltage | VCBO | -120 | V | Ta = 25°C | 1 | ||
| Collector-emitter voltage | VCEO | -120 | V | Ta = 25°C | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta = 25°C | 1 | ||
| Collector current | IC | -100 | mA | Ta = 25°C | 1 | ||
| Base current | IB | -20 | mA | Ta = 25°C | 1 | ||
| Collector power dissipation (Note 2, 4: LF(T) | PC | 200 | mW | Ta = 25°C; ordering part number ending in LF(T; mounted on FR4 board | 1 | ||
| Collector power dissipation (Note 3) | PC | 150 | mW | Ta = 25°C; ordering part number other than LF(T | 1 | ||
| Junction temperature (Note 2) | Tj | 150 | °C | Ordering part number ending in LF(T | 1 | ||
| Junction temperature (Note 3) | Tj | 125 | °C | Ordering part number other than LF(T | 1 | ||
| Storage temperature range (Note 2) | Tstg | -55 | 150 | °C | Ordering part number ending in LF(T | 1 | |
| Storage temperature range (Note 3) | Tstg | -55 | 125 | °C | Ordering part number other than LF(T | 1 | |
| Transition frequency | fT | 100 | MHz | VCE = −6 V, IC = −1 mA | 2 | ||
| Collector output capacitance | Cob | 4 | pF | VCB = −10 V, IE = 0 A, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
2SA1163-GR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
2sa1163-gr-etched.step/2sa1163-gr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1163-gr.step/2sa1163-gr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (6 pp, sha256
55075021cea468b6, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SA1163-GR
**TOSHIBA** · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SA1163-GR from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max is −5 V and base current IB max is −20 mA. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage VEBO max is −5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO and VCEO are −120 V max and collector current IC is −100 mA max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | | | -0.1 | µA | VCB = −120 V, IE = 0 A | 2 |
| Emitter cut-off current | IEBO | | | -0.1 | µA | VEB = −5 V, IC = 0 A | 2 |
| DC current gain (GR classification) | hFE | 200 | | 400 | | VCE = −6 V, IC = −2 mA; GR (G): 200 to 400 | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.3 | V | IC = −10 mA, IB = −1 mA | 2 |
| Noise figure | NF | | 1 | 10 | dB | VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ | 2 |
| Collector-base voltage | VCBO | | | -120 | V | Ta = 25°C | 1 |
| Collector-emitter voltage | VCEO | | | -120 | V | Ta = 25°C | 1 |
| Emitter-base voltage | VEBO | | | -5 | V | Ta = 25°C | 1 |
| Collector current | IC | | | -100 | mA | Ta = 25°C | 1 |
| Base current | IB | | | -20 | mA | Ta = 25°C | 1 |
| Collector power dissipation (Note 2, 4: LF(T) | PC | | | 200 | mW | Ta = 25°C; ordering part number ending in LF(T; mounted on FR4 board | 1 |
| Collector power dissipation (Note 3) | PC | | | 150 | mW | Ta = 25°C; ordering part number other than LF(T | 1 |
| Junction temperature (Note 2) | Tj | | | 150 | °C | Ordering part number ending in LF(T | 1 |
| Junction temperature (Note 3) | Tj | | | 125 | °C | Ordering part number other than LF(T | 1 |
| Storage temperature range (Note 2) | Tstg | -55 | | 150 | °C | Ordering part number ending in LF(T | 1 |
| Storage temperature range (Note 3) | Tstg | -55 | | 125 | °C | Ordering part number other than LF(T | 1 |
| Transition frequency | fT | | 100 | | MHz | VCE = −6 V, IC = −1 mA | 2 |
| Collector output capacitance | Cob | | 4 | | pF | VCB = −10 V, IE = 0 A, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `2SA1163-GR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files: `2sa1163-gr-etched.step` / `2sa1163-gr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sa1163-gr.step` / `2sa1163-gr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/2sa1163-gr-datasheet.pdf) (6 pp, sha256 `55075021cea468b6`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sa1163-gr-datasheet.pdf)