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2SA1163-GR

TOSHIBA · Bipolar (BJT) · TO-236-3(SOT-23-3)

2SA1163-GR from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; VEBO max is −5 V and base current IB max is −20 mA.
2 E passive Emitter of the PNP transistor; emitter-base voltage VEBO max is −5 V.
3 C passive Collector of the PNP transistor; VCBO and VCEO are −120 V max and collector current IC is −100 mA max.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector cut-off current ICBO -0.1 µA VCB = −120 V, IE = 0 A 2
Emitter cut-off current IEBO -0.1 µA VEB = −5 V, IC = 0 A 2
DC current gain (GR classification) hFE 200 400 VCE = −6 V, IC = −2 mA; GR (G): 200 to 400 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC = −10 mA, IB = −1 mA 2
Noise figure NF 1 10 dB VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ 2
Collector-base voltage VCBO -120 V Ta = 25°C 1
Collector-emitter voltage VCEO -120 V Ta = 25°C 1
Emitter-base voltage VEBO -5 V Ta = 25°C 1
Collector current IC -100 mA Ta = 25°C 1
Base current IB -20 mA Ta = 25°C 1
Collector power dissipation (Note 2, 4: LF(T) PC 200 mW Ta = 25°C; ordering part number ending in LF(T; mounted on FR4 board 1
Collector power dissipation (Note 3) PC 150 mW Ta = 25°C; ordering part number other than LF(T 1
Junction temperature (Note 2) Tj 150 °C Ordering part number ending in LF(T 1
Junction temperature (Note 3) Tj 125 °C Ordering part number other than LF(T 1
Storage temperature range (Note 2) Tstg -55 150 °C Ordering part number ending in LF(T 1
Storage temperature range (Note 3) Tstg -55 125 °C Ordering part number other than LF(T 1
Transition frequency fT 100 MHz VCE = −6 V, IC = −1 mA 2
Collector output capacitance Cob 4 pF VCB = −10 V, IE = 0 A, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: 2SA1163-GR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: 2sa1163-gr-etched.step / 2sa1163-gr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1163-gr.step / 2sa1163-gr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (6 pp, sha256 55075021cea468b6, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF