# 2N7002K 72K

**Changjiang Electronics Tech (CJ)** · MOSFETs · SOT-23

2N7002K 72K from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET, rated for a gate-source voltage VGS of 20 V and protected by a gate-source Zener diode with breakdown of ±21.5 V to ±30 V. |
| 2 | SOURCE | passive | Source terminal and reference for VGS, in a device rated for a drain-source voltage VDS of 60 V and a drain current ID of 340 mA. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 60 V and a drain current of 340 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0V, ID =250µA | 1 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | VDS =VGS, ID =1mA | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS =48V,VGS = 0V | 1 |
| Gate-Source leakage current IGSS1 | IGSS1 | -10 |  | 10 | µA | VGS =±20V, VDS = 0V | 1 |
| Gate-Source leakage current IGSS2 | IGSS2 | -200 |  | 200 | nA | VGS =±10V, VDS = 0V | 1 |
| Gate-Source leakage current IGSS3 | IGSS3 | -100 |  | 100 | nA | VGS =±5V, VDS = 0V | 1 |
| Drain-Source On-Resistance | RDS(on) |  |  | 5.3 | Ω | VGS = 4.5V, ID =200mA | 1 |
| Drain-Source On-Resistance | RDS(on) |  |  | 5 | Ω | VGS =10V,ID =500mA | 1 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | VGS=0V, IS=300mA | 1 |
| Recovered charge | Qr |  | 30 |  | nC | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 1 |
| Gate-Source Breakdown Voltage | BVGSO | 21.5 |  | 30 | V | Igs=±1mA (Open Drain) | 1 |
| Drain-Source voltage | VDS |  |  | 60 | V |  | 1 |
| Drain Current | ID |  |  | 340 | mA |  | 1 |
| Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Gate-Source voltage | VGS |  |  | 20 | V |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 357 | ℃/W |  | 1 |
| Input Capacitance | Ciss |  | 40 |  | pF |  | 1 |
| Output Capacitance | Coss |  | 30 |  | pF |  | 1 |
| Reverse Transfer Capacitance | Crss |  | 10 |  | pF | VDS =10V,VGS =0V,f =1MHz | 1 |
| Turn-On Delay Time | td(on) |  | 10 |  | ns |  | 1 |
| Turn-Off Delay Time | td(off) |  | 15 |  | ns | VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω | 1 |
| Reverse recovery Time | trr |  | 30 |  | ns | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 1 |

## CAD (KiCad official)

- Symbol: `2N7002K 72K`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2n7002k-72k-etched.step` / `2n7002k-72k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n7002k-72k.step` / `2n7002k-72k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/2n7002k-72k-datasheet.pdf) (3 pp, sha256 `611ec71e8cb03985`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2n7002k-72k-datasheet.pdf)