component
2N7002K 72K
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2N7002K 72K
Changjiang Electronics Tech (CJ) · MOSFETs · SOT-23
2N7002K 72K from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET, rated for a gate-source voltage VGS of 20 V and protected by a gate-source Zener diode with breakdown of ±21.5 V to ±30 V. |
| 2 | SOURCE | passive | Source terminal and reference for VGS, in a device rated for a drain-source voltage VDS of 60 V and a drain current ID of 340 mA. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 60 V and a drain current of 340 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0V, ID =250µA | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS =VGS, ID =1mA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =48V,VGS = 0V | 1 | ||
| Gate-Source leakage current IGSS1 | IGSS1 | -10 | 10 | µA | VGS =±20V, VDS = 0V | 1 | |
| Gate-Source leakage current IGSS2 | IGSS2 | -200 | 200 | nA | VGS =±10V, VDS = 0V | 1 | |
| Gate-Source leakage current IGSS3 | IGSS3 | -100 | 100 | nA | VGS =±5V, VDS = 0V | 1 | |
| Drain-Source On-Resistance | RDS(on) | 5.3 | Ω | VGS = 4.5V, ID =200mA | 1 | ||
| Drain-Source On-Resistance | RDS(on) | 5 | Ω | VGS =10V,ID =500mA | 1 | ||
| Diode Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=300mA | 1 | ||
| Recovered charge | Qr | 30 | nC | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 1 | ||
| Gate-Source Breakdown Voltage | BVGSO | 21.5 | 30 | V | Igs=±1mA (Open Drain) | 1 | |
| Drain-Source voltage | VDS | 60 | V | 1 | |||
| Drain Current | ID | 340 | mA | 1 | |||
| Power Dissipation | PD | 0.35 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Gate-Source voltage | VGS | 20 | V | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 40 | pF | 1 | |||
| Output Capacitance | Coss | 30 | pF | 1 | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | VDS =10V,VGS =0V,f =1MHz | 1 | ||
| Turn-On Delay Time | td(on) | 10 | ns | 1 | |||
| Turn-Off Delay Time | td(off) | 15 | ns | VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω | 1 | ||
| Reverse recovery Time | trr | 30 | ns | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS | 1 |
CAD (KiCad official)
- Symbol:
2N7002K 72K - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002k-72k-etched.step/2n7002k-72k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002k-72k.step/2n7002k-72k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (3 pp, sha256
611ec71e8cb03985, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).