# 2N7002H-7

**Diodes Incorporated** · MOSFETs · SOT-23

2N7002H-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20V continuous and ±40V pulsed, with a gate threshold of 2.0V to 3.0V at ID = 250µA. |
| 2 | S | passive | Source; the body diode carries a maximum continuous forward current of 0.5A (2A pulsed). |
| 3 | D | passive | Drain; drain-source voltage is rated 60V and continuous drain current is 210mA at TA = +25°C (Note 6 mounting). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS = 0V, ID = 10µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 60V, VGS = 0V | 3 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 3 | V | VDS = VGS, ID = 250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | 3 |
| Diode Forward Voltage | VSD |  | 0.78 | 1.5 | V | VGS = 0V, IS = 115mA | 3 |
| Drain-Source Voltage | VDSS |  |  | 60 | V | TA = +25°C | 2 |
| Gate-Source Voltage Continuous | VGSS | -20 |  | 20 | V | Continuous | 2 |
| Gate-Source Voltage Pulsed | VGSS | -40 |  | 40 | V | Pulsed | 2 |
| Continuous Drain Current (Note 5) TA=+25°C | ID |  |  | 170 | mA | VGS = 10V, Steady State, TA = +25°C | 2 |
| Continuous Drain Current (Note 5) TA=+85°C | ID |  |  | 120 | mA | VGS = 10V, Steady State, TA = +85°C | 2 |
| Continuous Drain Current (Note 5) TA=+100°C | ID |  |  | 105 | mA | VGS = 10V, Steady State, TA = +100°C | 2 |
| Continuous Drain Current (Note 6) TA=+25°C | ID |  |  | 210 | mA | VGS = 10V, Steady State, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) TA=+85°C | ID |  |  | 150 | mA | VGS = 10V, Steady State, TA = +85°C | 2 |
| Continuous Drain Current (Note 6) TA=+100°C | ID |  |  | 135 | mA | VGS = 10V, Steady State, TA = +100°C | 2 |
| Maximum Body Diode Forward Current Continuous | IS |  |  | 0.5 | A | Note 6, Continuous | 2 |
| Maximum Body Diode Forward Current Pulsed | IS |  |  | 2 | A | Note 6, Pulsed | 2 |
| Pulsed Drain Current | IDM |  |  | 500 | mA | 10µs pulse, duty cycle = 1% | 2 |
| Total Power Dissipation (Note 5) | PD |  |  | 370 | mW | TA = +25°C, Note 5 | 2 |
| Total Power Dissipation (Note 6) | PD |  |  | 510 | mW | TA = +25°C, Note 6 | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA |  | 341 |  | °C/W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA |  | 249 |  | °C/W | Note 6 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Input Capacitance | Ciss |  | 26 |  | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 |
| Output Capacitance | Coss |  | 2.8 |  | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 2.1 |  | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 |
| Total Gate Charge (VGS = 4.5V) | Qg |  | 352 |  | pC | VDS = 10V, ID = 250mA | 3 |
| Gate-Source Charge | Qgs |  | 203 |  | pC | VDS = 10V, ID = 250mA | 3 |
| Gate-Drain Charge | Qgd |  | 123 |  | pC | VDS = 10V, ID = 250mA | 3 |
| Turn-On Delay Time | tD(on) |  | 3.7 |  | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 |
| Turn-On Rise Time | tr |  | 2.9 |  | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 8.4 |  | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 |
| Turn-Off Fall Time | tf |  | 4.7 |  | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 |
| Body Diode Reverse Recovery Time | trr |  | 9.3 |  | ns | IS = 0.5A, dI/dt = 100A/μs | 3 |
| Body Diode Reverse Recovery Charge | Qrr |  | 3.5 |  | nC | IS = 0.5A, dI/dt = 100A/μs | 3 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin |  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |

## CAD (KiCad official)

- Symbol: `2N7002H-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2n7002h-7-etched.step` / `2n7002h-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n7002h-7.step` / `2n7002h-7.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/2N7002H-7.pdf) (7 pp, sha256 `b0a475f78a39e931`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2n7002h-7-datasheet.pdf)