component
2N7002H-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdown2N7002H-7
Diodes Incorporated · MOSFETs · SOT-23
2N7002H-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20V continuous and ±40V pulsed, with a gate threshold of 2.0V to 3.0V at ID = 250µA. |
| 2 | S | passive | Source; the body diode carries a maximum continuous forward current of 0.5A (2A pulsed). |
| 3 | D | passive | Drain; drain-source voltage is rated 60V and continuous drain current is 210mA at TA = +25°C (Note 6 mounting). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 10µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | V | VDS = VGS, ID = 250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | 3 | |
| Diode Forward Voltage | VSD | 0.78 | 1.5 | V | VGS = 0V, IS = 115mA | 3 | |
| Drain-Source Voltage | VDSS | 60 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage Continuous | VGSS | -20 | 20 | V | Continuous | 2 | |
| Gate-Source Voltage Pulsed | VGSS | -40 | 40 | V | Pulsed | 2 | |
| Continuous Drain Current (Note 5) TA=+25°C | ID | 170 | mA | VGS = 10V, Steady State, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 5) TA=+85°C | ID | 120 | mA | VGS = 10V, Steady State, TA = +85°C | 2 | ||
| Continuous Drain Current (Note 5) TA=+100°C | ID | 105 | mA | VGS = 10V, Steady State, TA = +100°C | 2 | ||
| Continuous Drain Current (Note 6) TA=+25°C | ID | 210 | mA | VGS = 10V, Steady State, TA = +25°C | 2 | ||
| Continuous Drain Current (Note 6) TA=+85°C | ID | 150 | mA | VGS = 10V, Steady State, TA = +85°C | 2 | ||
| Continuous Drain Current (Note 6) TA=+100°C | ID | 135 | mA | VGS = 10V, Steady State, TA = +100°C | 2 | ||
| Maximum Body Diode Forward Current Continuous | IS | 0.5 | A | Note 6, Continuous | 2 | ||
| Maximum Body Diode Forward Current Pulsed | IS | 2 | A | Note 6, Pulsed | 2 | ||
| Pulsed Drain Current | IDM | 500 | mA | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation (Note 5) | PD | 370 | mW | TA = +25°C, Note 5 | 2 | ||
| Total Power Dissipation (Note 6) | PD | 510 | mW | TA = +25°C, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 341 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 249 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Input Capacitance | Ciss | 26 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 2.8 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 2.1 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 352 | pC | VDS = 10V, ID = 250mA | 3 | ||
| Gate-Source Charge | Qgs | 203 | pC | VDS = 10V, ID = 250mA | 3 | ||
| Gate-Drain Charge | Qgd | 123 | pC | VDS = 10V, ID = 250mA | 3 | ||
| Turn-On Delay Time | tD(on) | 3.7 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-On Rise Time | tr | 2.9 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 8.4 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Turn-Off Fall Time | tf | 4.7 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | ||
| Body Diode Reverse Recovery Time | trr | 9.3 | ns | IS = 0.5A, dI/dt = 100A/μs | 3 | ||
| Body Diode Reverse Recovery Charge | Qrr | 3.5 | nC | IS = 0.5A, dI/dt = 100A/μs | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
2N7002H-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002h-7-etched.step/2n7002h-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002h-7.step/2n7002h-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
b0a475f78a39e931, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).