component

2N7002ET7G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray 2n7002et7g: specified limits as data (metadata.characteristics, 23 rows from the datasheet) 0413f26 10d ago

2N7002ET7G

onsemi · MOSFETs · SOT-23

2N7002ET7G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-to-source voltage VGS rated at ±20 V.
2 Source passive Source terminal of the N-channel MOSFET, with source (body diode) current IS rated at 300 mA maximum.
3 Drain passive Drain terminal of the N-channel MOSFET, with drain-to-source voltage VDSS rated at 60 V and drain current ID rated at 260 mA steady state (TA = 25°C) or 310 mA for t < 5 s.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Drain Current (Note 1) steady state ID 260 mA Steady state TA = 25°C 1
Drain Current (Note 1) steady state ID 190 mA Steady state TA = 85°C 1
Drain Current (Note 1) t < 5 s ID 310 mA t < 5 s TA = 25°C 1
Drain Current (Note 1) t < 5 s ID 220 mA t < 5 s TA = 85°C 1
Power Dissipation (Note 1) steady state PD 300 mW Steady state 1
Power Dissipation (Note 1) t < 5 s PD 420 mW t < 5 s 1
Pulsed Drain Current IDM 1.2 A tp = 10 s (as extracted; micro prefix missing) 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 300 mA 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Steady State RθJA 417 °C/W Steady state, surface-mounted on FR4, 1 in sq pad (Note 1) 1
Junction-to-Ambient t ≤ 5 s RθJA 300 °C/W t ≤ 5 s (Note 1) 1
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0 V, ID = 250 A (micro prefix missing as extracted) 2
Zero Gate Voltage Drain Current IDSS 1 µA VGS = 0 V, VDS = 60 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 500 µA VGS = 0 V, VDS = 60 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VGS = VDS, ID = 250 A (micro prefix missing as extracted) 2
Drain-to-Source On Resistance RDS(on) 0.86 2.5 Ohm VGS = 10 V, ID = 240 mA 2
Drain-to-Source On Resistance RDS(on) 1.1 3 Ohm VGS = 4.5 V, ID = 50 mA 2
Input Capacitance CISS 26.7 40 pF VGS = 0 V, f = 1 MHz, VDS = 25 V 2
Forward Diode Voltage VSD 0.79 1.2 V VGS = 0 V, IS = 200 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: 2N7002ET7G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002et7g-etched.step / 2n7002et7g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002et7g.step / 2n7002et7g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 9053f45327e2e198, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF