component
2N7002ET7G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2n7002et7g: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 60 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current (Note 1) steady state | ID | | | 260 | mA | Steady state TA = 25°C | 1 |+| Drain Current (Note 1) steady state | ID | | | 190 | mA | Steady state TA = 85°C | 1 |+| Drain Current (Note 1) t < 5 s | ID | | | 310 | mA | t < 5 s TA = 25°C | 1 |+| Drain Current (Note 1) t < 5 s | ID | | | 220 | mA | t < 5 s TA = 85°C | 1 |+| Power Dissipation (Note 1) steady state | PD | | | 300 | mW | Steady state | 1 |+| Power Dissipation (Note 1) t < 5 s | PD | | | 420 | mW | t < 5 s | 1 |+| Pulsed Drain Current | IDM | | | 1.2 | A | tp = 10 s (as extracted; micro prefix missing) | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | | | 300 | mA | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |+| Junction-to-Ambient Steady State | RθJA | | | 417 | °C/W | Steady state, surface-mounted on FR4, 1 in sq pad (Note 1) | 1 |+| Junction-to-Ambient t ≤ 5 s | RθJA | | | 300 | °C/W | t ≤ 5 s (Note 1) | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 250 A (micro prefix missing as extracted) | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 60 V, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 500 | µA | VGS = 0 V, VDS = 60 V, TJ = 125°C | 2 |+| Gate-to-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Gate Threshold Voltage | VGS(TH) | 1 | | 2.5 | V | VGS = VDS, ID = 250 A (micro prefix missing as extracted) | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 0.86 | 2.5 | Ohm | VGS = 10 V, ID = 240 mA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 1.1 | 3 | Ohm | VGS = 4.5 V, ID = 50 mA | 2 |+| Input Capacitance | CISS | | 26.7 | 40 | pF | VGS = 0 V, f = 1 MHz, VDS = 25 V | 2 |+| Forward Diode Voltage | VSD | | 0.79 | 1.2 | V | VGS = 0 V, IS = 200 mA, TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `2N7002ET7G`
page.json+284−1@@ -148,6 +148,289 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9053f45327e2e198",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Note 1) steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "Steady state TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Note 1) steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 190,+ "conditions": "Steady state TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Note 1) t < 5 s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 310,+ "conditions": "t < 5 s TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Note 1) t < 5 s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 220,+ "conditions": "t < 5 s TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1) steady state",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1) t < 5 s",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 420,+ "conditions": "t < 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "tp = 10 s (as extracted; micro prefix missing)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Steady State",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Steady state, surface-mounted on FR4, 1 in sq pad (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient t ≤ 5 s",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "t ≤ 5 s (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 A (micro prefix missing as extracted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VGS = VDS, ID = 250 A (micro prefix missing as extracted)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ohm",+ "min": null,+ "typ": 0.86,+ "max": 2.5,+ "conditions": "VGS = 10 V, ID = 240 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ohm",+ "min": null,+ "typ": 1.1,+ "max": 3,+ "conditions": "VGS = 4.5 V, ID = 50 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 26.7,+ "max": 40,+ "conditions": "VGS = 0 V, f = 1 MHz, VDS = 25 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.79,+ "max": 1.2,+ "conditions": "VGS = 0 V, IS = 200 mA, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +472,4 @@ "visibility": { "public": true }-}+}