# 2N7002BDW

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-363

2N7002BDW from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V, ID 350mA), with body diode to D1. |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±30V with threshold 1.0 to 2.5V at 250µA. |
| 3 | D2 | passive | Drain of MOSFET 2 (VDS 60V, ID 350mA). |
| 4 | S2 | passive | Source of MOSFET 2, with body diode to D2. |
| 5 | G2 | input | Gate of MOSFET 2; VGS rated ±30V with threshold 1.0 to 2.5V at 250µA. |
| 6 | D1 | passive | Drain of MOSFET 1 (VDS 60V, ID 350mA). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 60 | V | TA=25℃ | 1 |
| Gate-source Voltage | VGS | -30 |  | 30 | V | TA=25℃ (printed ±30) | 1 |
| Drain Current | ID |  |  | 350 | mA | TA=25℃ | 1 |
| Drain Current | ID |  |  | 221 | mA | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 2 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |
| Total Power Dissipation | PD |  |  | 240 | mW | TA=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 96 | mW | TA=100℃ | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-to-Ambient, Steady-State | RθJA |  | 430 | 520 | ℃/W | Steady-state; device on 1 in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=60V, VGS=0V, Tj=150℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 700 | 1000 | mΩ | VGS=10V, ID=350mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 815 | 1400 | mΩ | VGS=4.5V, ID=200mA | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | IS=350mA, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 350 | mA |  | 2 |

## CAD (KiCad official)

- Symbol: `2N7002BDW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `2n7002bdw-etched.step` / `2n7002bdw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n7002bdw.step` / `2n7002bdw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/2n7002bdw-datasheet.pdf) (8 pp, sha256 `7774156208bc9fe9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2n7002bdw-datasheet.pdf)