component
2N7002BDW
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2N7002BDW
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-363
2N7002BDW from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V, ID 350mA), with body diode to D1. |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±30V with threshold 1.0 to 2.5V at 250µA. |
| 3 | D2 | passive | Drain of MOSFET 2 (VDS 60V, ID 350mA). |
| 4 | S2 | passive | Source of MOSFET 2, with body diode to D2. |
| 5 | G2 | input | Gate of MOSFET 2; VGS rated ±30V with threshold 1.0 to 2.5V at 250µA. |
| 6 | D1 | passive | Drain of MOSFET 1 (VDS 60V, ID 350mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate-source Voltage | VGS | -30 | 30 | V | TA=25℃ (printed ±30) | 1 | |
| Drain Current | ID | 350 | mA | TA=25℃ | 1 | ||
| Drain Current | ID | 221 | mA | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 2 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Total Power Dissipation | PD | 240 | mW | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 96 | mW | TA=100℃ | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient, Steady-State | RθJA | 430 | 520 | ℃/W | Steady-state; device on 1 in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=60V, VGS=0V, Tj=150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 700 | 1000 | mΩ | VGS=10V, ID=350mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 815 | 1400 | mΩ | VGS=4.5V, ID=200mA | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=350mA, VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 350 | mA | 2 |
CAD (KiCad official)
- Symbol:
2N7002BDW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
2n7002bdw-etched.step/2n7002bdw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002bdw.step/2n7002bdw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256
7774156208bc9fe9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).