2N7002

{
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  "type": "component",
  "slug": "2n7002",
  "title": "2N7002",
  "brief": "Diodes Inc N-channel enhancement-mode MOSFET, SOT-23. 60 V, RDS(on) 5 Ohm, ID 210 mA. Datasheet-verified.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistor",
    "mosfet",
    "n-channel",
    "sot-23",
    "diodes-incorporated"
  ],
  "component": {
    "mpn": "2N7002",
    "manufacturer": "Diodes Incorporated",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistor",
    "subcategory": "N-channel MOSFET",
    "datasheet": "https://www.diodes.com/assets/Datasheets/2N7002.pdf",
    "parts": {
      "symbol": "2n7002.kicad_sym",
      "footprint": "2n7002.kicad_mod",
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Controls the drain-source channel. Threshold VGS(TH) = 1.0V (min) to 2.5V (max); absolute max VGSS = ±20V continuous / ±40V pulsed. Input capacitance Ciss ≈ 22pF."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source. Reference terminal for VGS; typically tied to the low-side rail in a low-side switch. Body diode anode (intrinsic diode is source→drain, VSD ≈ 0.78V typ)."
      },
      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain. Switched output terminal. BVDSS = 60V (min), continuous ID up to 210mA @ TA=+25°C, pulsed IDM = 800mA. Body diode cathode."
      }
    ],
    "provenance": {
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        "pages": 5,
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        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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    },
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    "models_3d": [
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          3.0,
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        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-07",
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  "metadata": {
    "specs": {
      "Type": "N-channel enhancement-mode MOSFET",
      "Drain-source voltage (BVDSS)": "60 V",
      "Gate threshold (VGS(th))": "1.0-2.5 V",
      "Gate-source voltage (VGSS)": "±20 V (±40 V pulsed)",
      "On-resistance (RDS(on))": "5 Ω @ VGS=10 V (7.5 Ω @ 5 V)",
      "Continuous drain current (ID)": "210 mA @ 25 °C (IDM 800 mA)",
      "Input capacitance (Ciss)": "22 pF",
      "Package": "SOT-23",
      "Body (L×W×H)": "2.9 × 1.3 × 1.15 mm"
    },
    "characteristics": {
      "version": 1,
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          "max": 20,
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          "max": 40,
          "conditions": "Pulsed (Note 8)",
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        },
        {
          "name": "Operating and Storage Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "thermal",
          "unit": "°C",
          "min": -55,
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          "max": 150,
          "conditions": "",
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          "name": "Drain-Source Breakdown Voltage",
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          "kind": "electrical",
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          "typ": 70,
          "max": null,
          "conditions": "VGS = 0V, ID = 10µA",
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          "name": "Zero Gate Voltage Drain Current @ TJ = +25°C",
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          "name": "Zero Gate Voltage Drain Current @ TJ = +125°C",
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        {
          "name": "Gate-Body Leakage",
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          "kind": "electrical",
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          "name": "Gate Threshold Voltage",
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          "kind": "electrical",
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        {
          "name": "Static Drain-Source On-Resistance @ TJ = +25°C",
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          "kind": "electrical",
          "unit": "Ω",
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          "typ": 3.2,
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          "conditions": "VGS = 5.0V, ID = 0.05A",
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          "name": "Static Drain-Source On-Resistance @ TJ = +25°C",
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          "typ": 2.4,
          "max": 5,
          "conditions": "VGS = 10V, ID = 0.5A",
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          "name": "Static Drain-Source On-Resistance @ TJ = +125°C",
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          "unit": "Ω",
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          "typ": 4.4,
          "max": 13.5,
          "conditions": "VGS = 10V, ID = 0.5A",
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          "name": "On-State Drain Current",
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          "kind": "electrical",
          "unit": "A",
          "min": 0.5,
          "typ": 1,
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          "source_page": 2,
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        {
          "name": "Forward Transconductance",
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          "kind": "electrical",
          "unit": "mS",
          "min": 80,
          "typ": null,
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          "conditions": "VDS = 10V, ID = 0.2A",
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        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.78,
          "max": 1.5,
          "conditions": "VGS = 0V, IS = 115mA",
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        },
        {
          "name": "Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
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          "conditions": "VDS = 25V, VGS = 0V, f = 1.0MHz",
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        {
          "name": "Output Capacitance",
          "symbol": "Coss",
          "kind": "electrical",
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          "max": 25,
          "conditions": "VDS = 25V, VGS = 0V, f = 1.0MHz",
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        {
          "name": "Reverse Transfer Capacitance",
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          "name": "Maximum Continuous Body Diode Forward Current",
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  },
  "discovery_triggers": [
    "2n7002",
    "n-channel mosfet sot-23",
    "small signal mosfet",
    "logic level mosfet"
  ],
  "discovery_pitch": "2N7002 N-channel enhancement-mode MOSFET (SOT-23) with datasheet-verified specs, KiCad symbol/footprint/3D, and full provenance.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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