component

2N7002

Public Made by Adom

by adom

Diodes Inc N-channel enhancement-mode MOSFET, SOT-23. 60 V, RDS(on) 5 Ohm, ID 210 mA. Datasheet-verified.

componenttransistormosfetn-channelsot-23diodes-incorporated
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Contents

README

markdown

2N7002

Diodes Incorporated · N-channel MOSFET · SOT-23

Surface-mount N-channel enhancement-mode MOSFET in a SOT-23 package, a workhorse small-signal switch. Rated for 60 V drain-source, on-resistance of 5 ohm at VGS = 10 V (7.5 ohm at 5 V), and continuous drain current up to 210 mA. Low gate threshold and fast switching suit low-side switching, level shifting, and power-management gating. Body diode is intrinsic source-to-drain.

Pinout

Pin Name Type Function
1 G input Gate. Controls the drain-source channel. Threshold VGS(TH) = 1.0V (min) to 2.5V (max); absolute max VGSS = ±20V continuous / ±40V pulsed. Input capacitance Ciss ≈ 22pF.
2 S passive Source. Reference terminal for VGS; typically tied to the low-side rail in a low-side switch. Body diode anode (intrinsic diode is source→drain, VSD ≈ 0.78V typ).
3 D passive Drain. Switched output terminal. BVDSS = 60V (min), continuous ID up to 210mA @ TA=+25°C, pulsed IDM = 800mA. Body diode cathode.

Key specifications

Parameter Value
Type N-channel enhancement-mode MOSFET
Drain-source voltage (BVDSS) 60 V
Gate threshold (VGS(th)) 1.0-2.5 V
Gate-source voltage (VGSS) ±20 V (±40 V pulsed)
On-resistance (RDS(on)) 5 Ω @ VGS=10 V (7.5 Ω @ 5 V)
Continuous drain current (ID) 210 mA @ 25 °C (IDM 800 mA)
Input capacitance (Ciss) 22 pF
Package SOT-23
Body (L×W×H) 2.9 × 1.3 × 1.15 mm

Ordering variants

  • 2N7002-7-F
  • 2N7002-13-F

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage, continuous VGSS -20 20 V Continuous 2
Gate-Source Voltage, pulsed VGSS -40 40 V Pulsed (Note 8) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current @ TJ = +25°C IDSS 1 µA VDS = 60V, VGS = 0V 2
Zero Gate Voltage Drain Current @ TJ = +125°C IDSS 500 µA VDS = 60V, VGS = 0V 2
Gate-Body Leakage IGSS -10 10 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance @ TJ = +25°C RDS(ON) 3.2 7.5 Ω VGS = 5.0V, ID = 0.05A 2
Static Drain-Source On-Resistance @ TJ = +25°C RDS(ON) 2.4 5 Ω VGS = 10V, ID = 0.5A 2
Static Drain-Source On-Resistance @ TJ = +125°C RDS(ON) 4.4 13.5 Ω VGS = 10V, ID = 0.5A 2
On-State Drain Current ID(ON) 0.5 1 A VGS = 10V, VDS = 7.5V 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.2A 2
Diode Forward Voltage VSD 0.78 1.5 V VGS = 0V, IS = 115mA 2
Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 11 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2 5 pF VDS = 25V, VGS = 0V, f = 1.0MHz 2
Drain-Source Voltage VDSS 60 V 2
Drain-Gate Voltage VDGR 60 V RGS ≤ 1.0MΩ 2
Continuous Drain Current, Note 5 (TA = +25°C) ID 170 mA VGS = 10V, steady state, Note 5 2
Continuous Drain Current, Note 5 (TA = +85°C) ID 120 mA VGS = 10V, steady state, Note 5 2
Continuous Drain Current, Note 5 (TA = +100°C) ID 105 mA VGS = 10V, steady state, Note 5 2
Continuous Drain Current, Note 6 (TA = +25°C) ID 210 mA VGS = 10V, steady state, Note 6 2
Continuous Drain Current, Note 6 (TA = +85°C) ID 150 mA VGS = 10V, steady state, Note 6 2
Continuous Drain Current, Note 6 (TA = +100°C) ID 135 mA VGS = 10V, steady state, Note 6 2
Maximum Continuous Body Diode Forward Current IS 0.2 A Continuous, Note 6 2
Maximum Body Diode Forward Current, pulsed IS 0.5 A Pulsed (Note 8) 2
Pulsed Drain Current IDM 800 mA 10µs pulse, duty cycle = 1% 2
Total Power Dissipation, Note 5 PD 370 mW Note 5 2
Total Power Dissipation, Note 6 PD 540 mW Note 6 2
Thermal Resistance, Junction to Ambient, Note 5 RθJA 348 °C/W Note 5 2
Thermal Resistance, Junction to Ambient, Note 6 RθJA 241 °C/W Note 6 2
Thermal Resistance, Junction to Case, Note 6 RθJC 91 °C/W Note 6 2

CAD (KiCad official)

  • Symbol: Transistor_FET:2N7002
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D)
  • 3D model files: 2n7002-etched.step / 2n7002-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002.step / 2n7002.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 ff8e1c98f93c7e3a, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude) — every pin and dimension is cited to a datasheet page; refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF