component
2N65L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2N65L
UMW · MOSFETs · TO-252
2N65L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 650 V N-channel MOSFET; the datasheet's absolute maximum gate-source voltage is ±30 V. |
| 2 | D | passive | DRAIN terminal of the 650 V N-channel MOSFET; the datasheet rates drain-source voltage at 650 V and continuous drain current at 2 A (TC=25°C). |
| 3 | S | passive | SOURCE terminal of the 650 V N-channel MOSFET; it is the reference for the gate-source voltage ratings (±30 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 650 | V | TC=25°C | 1 | ||
| Gate-source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | TC=25°C; drain current limited by maximum junction temperature | 1 | ||
| Continuous Drain Current | ID | 1.25 | A | TC=100°C; drain current limited by maximum junction temperature | 1 | ||
| Drain Current Pulsed | IDM | 8 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation (TO-251/TO-252) | Ptot | 28 | W | TO-251/TO-252 column of the ratings table | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A | 1 | ||
| Drain-source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 3 | |
| Drain-source Leakage Current | IDSS | 25 | µA | VDS=650V, VGS=0V, TJ=25°C | 3 | ||
| Drain-source Leakage Current | IDSS | 250 | µA | VDS=520V, VGS=0V, TJ=125°C | 3 | ||
| Static Drain-source On Resistance | RDS(ON) | 4.5 | Ω | VGS=10V, ID=1A | 3 | ||
| Continuous Diode Forward Current | IS | 2 | A | TJ=25°C, IS=2A, VGS=0V | 3 | ||
| Diode Forward Voltage | VSD | 1.4 | V | TJ=25°C, IS=2A, VGS=0V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Input capacitance | Ciss | 311 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | ||
| Turn-Off Delay Time | tD(off) | 24 | ns | VDD=300V, ID=2A, RG=25Ω | 3 | ||
| Total Gate Charge | Qg | 14.5 | nC | ID=2A, VDS=520V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 1.8 | nC | ID=2A, VDS=520V, VGS=10V | 3 | ||
| Gate-to-Drain Charge | Qgd | 8.3 | nC | ID=2A, VDS=520V, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 368 | ns | TJ=25°C, IF=2A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
2N65L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2n65l-etched.step/2n65l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n65l.step/2n65l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (13 pp, sha256
dfc2217b458522c6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2N65L
**UMW** · MOSFETs · TO-252
2N65L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 650 V N-channel MOSFET; the datasheet's absolute maximum gate-source voltage is ±30 V. |
| 2 | D | passive | DRAIN terminal of the 650 V N-channel MOSFET; the datasheet rates drain-source voltage at 650 V and continuous drain current at 2 A (TC=25°C). |
| 3 | S | passive | SOURCE terminal of the 650 V N-channel MOSFET; it is the reference for the gate-source voltage ratings (±30 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 650 | V | TC=25°C | 1 |
| Gate-source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 2 | A | TC=25°C; drain current limited by maximum junction temperature | 1 |
| Continuous Drain Current | ID | | | 1.25 | A | TC=100°C; drain current limited by maximum junction temperature | 1 |
| Drain Current Pulsed | IDM | | | 8 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Power Dissipation (TO-251/TO-252) | Ptot | | | 28 | W | TO-251/TO-252 column of the ratings table | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 120 | mJ | Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A | 1 |
| Drain-source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250µA | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250µA | 3 |
| Gate-body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0 | 3 |
| Drain-source Leakage Current | IDSS | | | 25 | µA | VDS=650V, VGS=0V, TJ=25°C | 3 |
| Drain-source Leakage Current | IDSS | | | 250 | µA | VDS=520V, VGS=0V, TJ=125°C | 3 |
| Static Drain-source On Resistance | RDS(ON) | | | 4.5 | Ω | VGS=10V, ID=1A | 3 |
| Continuous Diode Forward Current | IS | | | 2 | A | TJ=25°C, IS=2A, VGS=0V | 3 |
| Diode Forward Voltage | VSD | | | 1.4 | V | TJ=25°C, IS=2A, VGS=0V | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.6 | | V/°C | ID=250µA, Referenced to 25°C | 3 |
| Input capacitance | Ciss | | 311 | | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Turn-Off Delay Time | tD(off) | | 24 | | ns | VDD=300V, ID=2A, RG=25Ω | 3 |
| Total Gate Charge | Qg | | 14.5 | | nC | ID=2A, VDS=520V, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 1.8 | | nC | ID=2A, VDS=520V, VGS=10V | 3 |
| Gate-to-Drain Charge | Qgd | | 8.3 | | nC | ID=2A, VDS=520V, VGS=10V | 3 |
| Reverse Recovery Time | trr | | 368 | | ns | TJ=25°C, IF=2A, di/dt=100A/µs | 3 |
## CAD (KiCad official)
- Symbol: `2N65L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2n65l-etched.step` / `2n65l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n65l.step` / `2n65l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755874463416639488) (13 pp, sha256 `dfc2217b458522c6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2n65l-datasheet.pdf)