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2N65L

Public Made by Adom

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N65L

UMW · MOSFETs · TO-252

2N65L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 650 V N-channel MOSFET; the datasheet's absolute maximum gate-source voltage is ±30 V.
2 D passive DRAIN terminal of the 650 V N-channel MOSFET; the datasheet rates drain-source voltage at 650 V and continuous drain current at 2 A (TC=25°C).
3 S passive SOURCE terminal of the 650 V N-channel MOSFET; it is the reference for the gate-source voltage ratings (±30 V).

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 650 V TC=25°C 1
Gate-source Voltage VGS -30 30 V 1
Continuous Drain Current ID 2 A TC=25°C; drain current limited by maximum junction temperature 1
Continuous Drain Current ID 1.25 A TC=100°C; drain current limited by maximum junction temperature 1
Drain Current Pulsed IDM 8 A Repetitive rating: pulse width limited by maximum junction temperature 1
Power Dissipation (TO-251/TO-252) Ptot 28 W TO-251/TO-252 column of the ratings table 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Single Pulse Avalanche Energy EAS 120 mJ Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A 1
Drain-source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250µA 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250µA 3
Gate-body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 3
Drain-source Leakage Current IDSS 25 µA VDS=650V, VGS=0V, TJ=25°C 3
Drain-source Leakage Current IDSS 250 µA VDS=520V, VGS=0V, TJ=125°C 3
Static Drain-source On Resistance RDS(ON) 4.5 Ω VGS=10V, ID=1A 3
Continuous Diode Forward Current IS 2 A TJ=25°C, IS=2A, VGS=0V 3
Diode Forward Voltage VSD 1.4 V TJ=25°C, IS=2A, VGS=0V 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.6 V/°C ID=250µA, Referenced to 25°C 3
Input capacitance Ciss 311 pF VGS=0V, VDS=25V, f=1MHz 3
Turn-Off Delay Time tD(off) 24 ns VDD=300V, ID=2A, RG=25Ω 3
Total Gate Charge Qg 14.5 nC ID=2A, VDS=520V, VGS=10V 3
Gate-to-Source Charge Qgs 1.8 nC ID=2A, VDS=520V, VGS=10V 3
Gate-to-Drain Charge Qgd 8.3 nC ID=2A, VDS=520V, VGS=10V 3
Reverse Recovery Time trr 368 ns TJ=25°C, IF=2A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: 2N65L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 2n65l-etched.step / 2n65l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n65l.step / 2n65l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (13 pp, sha256 dfc2217b458522c6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF