# 2N60L

**UMW** · MOSFETs · TO-252

2N60L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 600 V N-channel MOSFET; the gate-source voltage is rated ±30 V. |
| 2 | D | passive | DRAIN terminal; the device is rated for 600 V drain-source voltage and 2 A continuous drain current at TC=25°C. |
| 3 | S | passive | SOURCE terminal, the reference for the gate-source and drain-source ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250µA | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250µA | 3 |
| Drain-source Leakage Current | IDSS |  |  | 1 | µA | VDS=600V, VGS=0V, TJ=25°C | 3 |
| Drain-source Leakage Current | IDSS |  |  | 10 | µA | VDS=480V, VGS=0V, TJ=125°C | 3 |
| Gate-body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±30V (VDS=0) | 3 |
| Static Drain-source On Resistance | RDS(ON) |  | 4.2 | 4.5 | Ω | VGS=10V, ID=1A | 3 |
| Input capacitance | Ciss |  | 320 | 380 | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.4 | V | TJ=25°C, IS=2A, VGS=0V | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.6 |  | V/°C | ID=250µA, referenced to 25°C | 3 |
| Drain-source Voltage | VDS |  |  | 600 | V |  | 1 |
| Gate-source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 2 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 1.25 | A | TC=100°C | 1 |
| Drain Current Pulsed | IDM |  |  | 8 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 120 | mJ | Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Power Dissipation | PD |  |  | 54 | W |  | 1 |
| Power Dissipation | PD |  |  | 45 | W |  | 1 |

## CAD (KiCad official)

- Symbol: `2N60L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2n60l-etched.step` / `2n60l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n60l.step` / `2n60l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755874529648758784) (12 pp, sha256 `0fa41bfb31a83114`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2n60l-datasheet.pdf)