component
2N60L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 15d ago |
| 2n60l-etched.glb | 8d ago |
| 2n60l-etched.step | 8d ago |
| 2n60l-hero.glb | 8d ago |
| 2n60l-hero.overlay.json | 8d ago |
| 2n60l.glb | 15d ago |
| 2n60l.kicad_mod | 15d ago |
| 2n60l.kicad_sym | 15d ago |
| 2n60l.lbr | 15d ago |
| 2n60l.step | 15d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
2N60L
UMW · MOSFETs · TO-252
2N60L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 600 V N-channel MOSFET; the gate-source voltage is rated ±30 V. |
| 2 | D | passive | DRAIN terminal; the device is rated for 600 V drain-source voltage and 2 A continuous drain current at TC=25°C. |
| 3 | S | passive | SOURCE terminal, the reference for the gate-source and drain-source ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Drain-source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V, TJ=25°C | 3 | ||
| Drain-source Leakage Current | IDSS | 10 | µA | VDS=480V, VGS=0V, TJ=125°C | 3 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V (VDS=0) | 3 | |
| Static Drain-source On Resistance | RDS(ON) | 4.2 | 4.5 | Ω | VGS=10V, ID=1A | 3 | |
| Input capacitance | Ciss | 320 | 380 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Diode Forward Voltage | VSD | 0.9 | 1.4 | V | TJ=25°C, IS=2A, VGS=0V | 3 | |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/°C | ID=250µA, referenced to 25°C | 3 | ||
| Drain-source Voltage | VDS | 600 | V | 1 | |||
| Gate-source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 1.25 | A | TC=100°C | 1 | ||
| Drain Current Pulsed | IDM | 8 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Power Dissipation | PD | 54 | W | 1 | |||
| Power Dissipation | PD | 45 | W | 1 |
CAD (KiCad official)
- Symbol:
2N60L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2n60l-etched.step/2n60l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n60l.step/2n60l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
0fa41bfb31a83114, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).