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2N4401TFR

onsemi · Bipolar (BJT) · TO-92-3

2N4401TFR from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter of the NPN transistor; the datasheet limits emitter-base voltage VEBO to 6.0 Vdc.
2 BASE passive Base of the NPN transistor; the datasheet specifies VBE(sat) of 0.75 to 0.95 Vdc at IC = 150 mAdc, IB = 15 mAdc, and 1.2 Vdc maximum at IC = 500 mAdc, IB = 50 mAdc.
3 COLLECTOR passive Collector of the NPN transistor; the datasheet limits collector-emitter voltage VCEO to 40 Vdc, collector-base voltage VCBO to 60 Vdc, and continuous collector current IC to 600 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc IC = 0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 0.1 mAdc, IC = 0 2
Base Cutoff Current IBEV 0.1 Adc VCE = 35 Vdc, VEB = 0.4 Vdc 2
Collector Cutoff Current ICEX 0.1 Adc VCE = 35 Vdc, VEB = 0.4 Vdc 2
DC Current Gain hFE 20 - IC = 0.1 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 40 - IC = 1.0 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 80 - IC = 10 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 100 300 - IC = 150 mAdc, VCE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.4 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.75 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 1.2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current-Gain - Bandwidth Product fT 250 MHz IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz 2
Collector-Base Capacitance Ccb 6.5 pF VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz 2
Emitter-Base Capacitance Ceb 30 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 1 15 k IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 8 X 10-4 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small-Signal Current Gain hfe 40 500 - IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 1 30 mhos IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Delay Time td 15 ns VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 2
Rise Time tr 20 ns 2
Storage Time ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 2
Fall Time tf 30 ns 2
Collector-Emitter Voltage VCEO 40 Vdc Maximum rating 1
Collector-Base Voltage VCBO 60 Vdc Maximum rating 1
Emitter-Base Voltage VEBO 6 Vdc Maximum rating 1
Collector Current - Continuous IC 600 mAdc Maximum rating 1
Total Device Dissipation PD 625 mW TA = 25°C 1
Total Device Dissipation PD 1.5 W TC = 25°C 1
Operating and Storage Junction Temperature Range TJ, Tstg -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W 1
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W 1

CAD (KiCad official)

  • Symbol: 2N4401TFR
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 2n4401tfr-etched.step / 2n4401tfr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n4401tfr.step / 2n4401tfr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 17be224434ed49e1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF