component
2N4401TFR
Public Made by Adomby adom
onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4h ago |
| viewers | 4h ago |
| 2n4401tfr-etched.glb | 4h ago |
| 2n4401tfr-etched.step | 4h ago |
| 2n4401tfr-hero.glb | 4h ago |
| 2n4401tfr-hero.overlay.json | 4h ago |
| 2n4401tfr.glb | 4h ago |
| 2n4401tfr.kicad_mod | 4h ago |
| 2n4401tfr.kicad_sym | 4h ago |
| 2n4401tfr.lbr | 4h ago |
| 2n4401tfr.step | 4h ago |
| package.json | 4h ago |
| page.json | 4h ago |
| README.md | 4h ago |
2N4401TFR
onsemi · Bipolar (BJT) · TO-92-3
2N4401TFR from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the NPN transistor; the datasheet limits emitter-base voltage VEBO to 6.0 Vdc. |
| 2 | BASE | passive | Base of the NPN transistor; the datasheet specifies VBE(sat) of 0.75 to 0.95 Vdc at IC = 150 mAdc, IB = 15 mAdc, and 1.2 Vdc maximum at IC = 500 mAdc, IB = 50 mAdc. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; the datasheet limits collector-emitter voltage VCEO to 40 Vdc, collector-base voltage VCBO to 60 Vdc, and continuous collector current IC to 600 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | Vdc | IC = 1.0 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | Vdc | IC = 0.1 mAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE = 0.1 mAdc, IC = 0 | 2 | ||
| Base Cutoff Current | IBEV | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 | ||
| Collector Cutoff Current | ICEX | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 | ||
| DC Current Gain | hFE | 20 | - | IC = 0.1 mAdc, VCE = 1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 40 | - | IC = 1.0 mAdc, VCE = 1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 80 | - | IC = 10 mAdc, VCE = 1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 100 | 300 | - | IC = 150 mAdc, VCE = 1.0 Vdc | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | 0.95 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 | ||
| Current-Gain - Bandwidth Product | fT | 250 | MHz | IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz | 2 | ||
| Collector-Base Capacitance | Ccb | 6.5 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Input Impedance | hie | 1 | 15 | k | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X 10-4 | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Small-Signal Current Gain | hfe | 40 | 500 | - | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Output Admittance | hoe | 1 | 30 | mhos | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Delay Time | td | 15 | ns | VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 2 | ||
| Rise Time | tr | 20 | ns | 2 | |||
| Storage Time | ts | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 2 | ||
| Fall Time | tf | 30 | ns | 2 | |||
| Collector-Emitter Voltage | VCEO | 40 | Vdc | Maximum rating | 1 | ||
| Collector-Base Voltage | VCBO | 60 | Vdc | Maximum rating | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | Vdc | Maximum rating | 1 | ||
| Collector Current - Continuous | IC | 600 | mAdc | Maximum rating | 1 | ||
| Total Device Dissipation | PD | 625 | mW | TA = 25°C | 1 | ||
| Total Device Dissipation | PD | 1.5 | W | TC = 25°C | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 83.3 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
2N4401TFR - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
2n4401tfr-etched.step/2n4401tfr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n4401tfr.step/2n4401tfr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
17be224434ed49e1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).