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2N4401

Changjing · Bipolar (BJT) · TO-92

2N4401 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter lead of the 2N4401 NPN transistor, rated for VEBO 6 V and IC continuous 600 mA maximum.
2 BASE passive Base lead of the 2N4401 NPN transistor; saturation is specified at IB=15 mA for IC=150 mA and IB=50 mA for IC=500 mA.
3 COLLECTOR passive Collector lead of the 2N4401 NPN transistor, rated for VCBO 60 V, VCEO 40 V, and IC continuous 600 mA maximum.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC=100μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=100μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB=35V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB=5V, IC=0 1
DC current gain hFE(1) 20 VCE=1V, IC=0.1mA 1
DC current gain hFE(2) 40 VCE=1V, IC=1mA 1
DC current gain hFE(3) 80 VCE=1V, IC=10mA 1
DC current gain hFE(4) 100 300 VCE=1V, IC=150mA 1
Collector-emitter saturation voltage VCE(sat)1 0.4 V IC=150 mA, IB=15mA 1
Collector-emitter saturation voltage VCE(sat)2 0.75 V IC=500 mA, IB=50mA 1
Base-emitter saturation voltage VBE(sat)1 0.95 V IC=150 mA, IB=15mA 1
Base-emitter saturation voltage VBE(sat)2 1.2 V IC=500 mA, IB=50mA 1
Transition frequency fT 250 MHz VCE=10V, IC=20mA, f=100MHz 1
Output Capacitance Cob 6.5 pF VCB=10V, IE=0, f=100KHz 1
Delay time td 15 nS 1
Rise time tr 20 nS VCC=30V, VBE(OFF)=2V, IC=150mA, IB1=15mA 1
Storage time tS 225 nS 1
Fall time tf 30 nS VCC=30V, IC=150mA, IB1=-IB2=15mA 1
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 40 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current -Continuous IC 600 mA 1
Collector Power dissipation PC 0.625 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance, junction to Ambient RӨJA 357 ℃/mW 1

CAD (KiCad official)

  • Symbol: 2N4401
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n4401-etched.step / 2n4401-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n4401.step / 2n4401.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (2 pp, sha256 9efe577da20e67ad, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF