component
2N4401
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N4401
Changjing · Bipolar (BJT) · TO-92
2N4401 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter lead of the 2N4401 NPN transistor, rated for VEBO 6 V and IC continuous 600 mA maximum. |
| 2 | BASE | passive | Base lead of the 2N4401 NPN transistor; saturation is specified at IB=15 mA for IC=150 mA and IB=50 mA for IC=500 mA. |
| 3 | COLLECTOR | passive | Collector lead of the 2N4401 NPN transistor, rated for VCBO 60 V, VCEO 40 V, and IC continuous 600 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=35V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=5V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 20 | VCE=1V, IC=0.1mA | 1 | |||
| DC current gain | hFE(2) | 40 | VCE=1V, IC=1mA | 1 | |||
| DC current gain | hFE(3) | 80 | VCE=1V, IC=10mA | 1 | |||
| DC current gain | hFE(4) | 100 | 300 | VCE=1V, IC=150mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | 0.4 | V | IC=150 mA, IB=15mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | 0.75 | V | IC=500 mA, IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | 0.95 | V | IC=150 mA, IB=15mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)2 | 1.2 | V | IC=500 mA, IB=50mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 1 | ||
| Output Capacitance | Cob | 6.5 | pF | VCB=10V, IE=0, f=100KHz | 1 | ||
| Delay time | td | 15 | nS | 1 | |||
| Rise time | tr | 20 | nS | VCC=30V, VBE(OFF)=2V, IC=150mA, IB1=15mA | 1 | ||
| Storage time | tS | 225 | nS | 1 | |||
| Fall time | tf | 30 | nS | VCC=30V, IC=150mA, IB1=-IB2=15mA | 1 | ||
| Collector-Base Voltage | VCBO | 60 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current -Continuous | IC | 600 | mA | 1 | |||
| Collector Power dissipation | PC | 0.625 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, junction to Ambient | RӨJA | 357 | ℃/mW | 1 |
CAD (KiCad official)
- Symbol:
2N4401 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2n4401-etched.step/2n4401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n4401.step/2n4401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (2 pp, sha256
9efe577da20e67ad, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).