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2N3906TA

Public Made by Adom

by adom

onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N3906TA

onsemi · Bipolar (BJT) · TO-92-3

2N3906TA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; the datasheet limits emitter-base voltage to VEBO -5.0 V (absolute maximum).
2 B passive Base of the PNP transistor; base-emitter reverse breakdown is specified at -5.0 V minimum (V(BR)EBO, IE = -10 µA), and the base-emitter voltage limit is VEBO -5.0 V.
3 C passive Collector of the PNP transistor; the datasheet limits collector-emitter voltage to VCEO -40 V and continuous collector current to IC -200 mA (absolute maximum).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC = -1.0 mA, IB = 0 4
Collector-Base Breakdown Voltage V(BR)CBO -40 V IC = -10 μA, IE = 0 4
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10 μA, IC = 0 4
Base Cut-Off Current IBL -50 nA VCE = -30 V, VBE = 3.0 V 4
Collector Cut-Off Current ICEX -50 nA VCE = -30 V, VBE = 3.0 V 4
DC Current Gain hFE 60 IC = -0.1 mA, VCE = -1.0 V 4
DC Current Gain hFE 80 IC = -1.0 mA, VCE = -1.0 V 4
DC Current Gain hFE 100 300 IC = -10 mA, VCE = -1.0 V 4
DC Current Gain hFE 30 IC = -100 mA, VCE = -1.0 V 4
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = -10 mA, IB = -1.0 mA 4
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -50 mA, IB = -5.0 mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 V IC = -10 mA, IB = -1.0 mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -50 mA, IB = -5.0 mA 4
Current Gain - Bandwidth Product fT 250 MHz IC = -10 mA, VCE = -20 V, f = 100 MHz 4
Output Capacitance Cobo 4.5 pF VCB = -5.0 V, IE = 0, f = 100 kHz 4
Input Capacitance Cibo 10 pF VEB = -0.5 V, IC = 0, f = 100 kHz 4
Noise Figure NF 4 dB IC = -100 μA, VCE = -5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 4
Delay Time td 35 ns VCC = -3.0 V, VBE = -0.5 V, IC = -10 mA, IB1 = -1.0 mA 4
Rise Time tr 35 ns VCC = -3.0 V, VBE = -0.5 V, IC = -10 mA, IB1 = -1.0 mA 4
Storage Time ts 225 ns VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA 4
Fall Time tf 75 ns VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA 4
Collector-Emitter Voltage VCEO -40 V 3
Collector-Base Voltage VCBO -40 V 3
Emitter-Base Voltage VEBO -5 V 3
Collector Current - Continuous IC -200 mA 3
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 3
Total Device Dissipation (2N3906) PD 625 mW 3
Derate Above 25°C (2N3906) PD derating 5 mW/°C Above 25°C 3
Thermal Resistance, Junction to Ambient (2N3906) RθJA 200 °C/W 3
Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3

CAD (KiCad official)

  • Symbol: 2N3906TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 2n3906ta-etched.step / 2n3906ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3906ta.step / 2n3906ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 78970f94d58cd67c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF