component
2N3906TA
Public Made by Adomby adom
onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N3906TA
onsemi · Bipolar (BJT) · TO-92-3
2N3906TA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; the datasheet limits emitter-base voltage to VEBO -5.0 V (absolute maximum). |
| 2 | B | passive | Base of the PNP transistor; base-emitter reverse breakdown is specified at -5.0 V minimum (V(BR)EBO, IE = -10 µA), and the base-emitter voltage limit is VEBO -5.0 V. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet limits collector-emitter voltage to VCEO -40 V and continuous collector current to IC -200 mA (absolute maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC = -1.0 mA, IB = 0 | 4 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC = -10 μA, IE = 0 | 4 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -10 μA, IC = 0 | 4 | ||
| Base Cut-Off Current | IBL | -50 | nA | VCE = -30 V, VBE = 3.0 V | 4 | ||
| Collector Cut-Off Current | ICEX | -50 | nA | VCE = -30 V, VBE = 3.0 V | 4 | ||
| DC Current Gain | hFE | 60 | IC = -0.1 mA, VCE = -1.0 V | 4 | |||
| DC Current Gain | hFE | 80 | IC = -1.0 mA, VCE = -1.0 V | 4 | |||
| DC Current Gain | hFE | 100 | 300 | IC = -10 mA, VCE = -1.0 V | 4 | ||
| DC Current Gain | hFE | 30 | IC = -100 mA, VCE = -1.0 V | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | V | IC = -10 mA, IB = -1.0 mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | V | IC = -50 mA, IB = -5.0 mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | V | IC = -10 mA, IB = -1.0 mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | V | IC = -50 mA, IB = -5.0 mA | 4 | ||
| Current Gain - Bandwidth Product | fT | 250 | MHz | IC = -10 mA, VCE = -20 V, f = 100 MHz | 4 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = -5.0 V, IE = 0, f = 100 kHz | 4 | ||
| Input Capacitance | Cibo | 10 | pF | VEB = -0.5 V, IC = 0, f = 100 kHz | 4 | ||
| Noise Figure | NF | 4 | dB | IC = -100 μA, VCE = -5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz | 4 | ||
| Delay Time | td | 35 | ns | VCC = -3.0 V, VBE = -0.5 V, IC = -10 mA, IB1 = -1.0 mA | 4 | ||
| Rise Time | tr | 35 | ns | VCC = -3.0 V, VBE = -0.5 V, IC = -10 mA, IB1 = -1.0 mA | 4 | ||
| Storage Time | ts | 225 | ns | VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA | 4 | ||
| Fall Time | tf | 75 | ns | VCC = -3.0 V, IC = -10 mA, IB1 = IB2 = -1.0 mA | 4 | ||
| Collector-Emitter Voltage | VCEO | -40 | V | 3 | |||
| Collector-Base Voltage | VCBO | -40 | V | 3 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 3 | |||
| Collector Current - Continuous | IC | -200 | mA | 3 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 3 | ||
| Total Device Dissipation (2N3906) | PD | 625 | mW | 3 | |||
| Derate Above 25°C (2N3906) | PD derating | 5 | mW/°C | Above 25°C | 3 | ||
| Thermal Resistance, Junction to Ambient (2N3906) | RθJA | 200 | °C/W | 3 | |||
| Thermal Resistance, Junction to Case | RθJC | 83.3 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
2N3906TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
2n3906ta-etched.step/2n3906ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n3906ta.step/2n3906ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
78970f94d58cd67c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).