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2N3906

Public Made by Adom

by adom

onsemi general-purpose PNP BJT, TO-92. 40 V, 200 mA, hFE 100-300. Complement of 2N3904. Datasheet-verified.

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Ray 2n3906: specified limits as data (metadata.characteristics, 30 rows from the datasheet) 975f0b3 20d ago

2N3906

onsemi · PNP BJT (general purpose) · TO-92

The 2N3906 is the standard general-purpose PNP bipolar transistor, the direct complement of the NPN 2N3904, in a TO-92 through-hole package. It switches and amplifies small signals up to about 200 mA and 40 V with a current gain (hFE) of roughly 100 to 300, so it handles high-side switching, PNP current sources, and small-signal gain. Being PNP, it turns on when the base is pulled below the emitter. The TO-92 leads are E, B, C in order (pin 1 = emitter).

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP BJT. VEBO breakdown = 5.0 V (reverse). In normal PNP operation the emitter is the most positive terminal, with current flowing from emitter to collector.
2 B input Base of the PNP BJT. Control terminal; pulling the base below the emitter by ~0.65-0.85 V (VBE(sat)) forward-biases the B-E junction and turns the transistor on. IBL (base cutoff) = 50 nA max at VBE = 3.0 V.
3 C passive Collector of the PNP BJT. VCEO breakdown = 40 V (reverse), VCBO = 40 V, IC = 200 mA continuous. VCE(sat) = 0.25 V max at IC = 10 mA, IB = 1.0 mA. In normal PNP operation the collector sinks current toward the more-negative supply.

Key specifications

Parameter Value
Type PNP bipolar transistor
Collector-emitter (VCEO) -40 V
Collector current (IC) -200 mA
DC gain (hFE) 100-300
Transition freq (fT) 250 MHz
Power dissipation 625 mW
Pinout E-B-C (pin 1 = emitter)
Package TO-92

Ordering variants

  • 2N3906BU (TO-92)
  • 2N3906TA (TO-92, ammo pack)

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1.0 mA, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 40 V IC = 10 µA, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 2
Base Cutoff Current IBL 50 nA VCE = 30 V, VBE = 3.0 V 2
Collector Cutoff Current ICEX 50 nA VCE = 30 V, VBE = 3.0 V 2
DC Current Gain hFE 60 IC = 0.1 mA, VCE = 1.0 V 2
DC Current Gain hFE 80 IC = 1.0 mA, VCE = 1.0 V 2
DC Current Gain hFE 100 IC = 10 mA, VCE = 1.0 V 2
DC Current Gain hFE 30 IC = 100 mA, VCE = 1.0 V 2
DC Current Gain hFE 300 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 1.0 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC = 50 mA, IB = 5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC = 10 mA, IB = 1.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC = 50 mA, IB = 5.0 mA 2
Current Gain - Bandwidth Product fT 250 MHz IC = 10 mA, VCE = 20 V, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 5.0 V, IE = 0, f = 100 kHz 2
Input Capacitance Cibo 10 pF VEB = 0.5 V, IC = 0, f = 100 kHz 2
Noise Figure NF 4 dB IC = 100 µA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 2
Delay Time td 35 ns VCC = 3.0 V, VBE = 0.5 V 2
Rise Time tr 35 ns IC = 10 mA, IB1 = 1.0 mA 2
Storage Time ts 225 ns VCC = 3.0 V, IC = 10mA 2
Fall Time tf 75 ns IB1 = IB2 = 1.0 mA 2
Collector-Emitter Voltage VCEO 40 V 1
Collector-Base Voltage VCBO 40 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current - Continuous IC 200 mA 1
Operating and Storage Junction Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 625 mW TA = 25°C 1
Thermal Resistance, Junction to Case RθJC 83.3 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 200 °C/W 1

CAD (KiCad official)

  • Symbol: Transistor_BJT:2N3906
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D)
  • 3D model files: 2n3906-etched.step / 2n3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3906.step / 2n3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 0173a9cdd84dfe57, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF