component
2N3906
Public Made by Adomby adom
onsemi general-purpose PNP BJT, TO-92. 40 V, 200 mA, hFE 100-300. Complement of 2N3904. Datasheet-verified.
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2n3906: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+404
README.md+37@@ -30,6 +30,43 @@ The 2N3906 is the standard general-purpose PNP bipolar transistor, the direct co - `2N3906BU (TO-92)` - `2N3906TA (TO-92, ammo pack)` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | | | V | IC = 1.0 mA, IB = 0 | 2 |+| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | | | V | IC = 10 µA, IE = 0 | 2 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | | | V | IE = 10 µA, IC = 0 | 2 |+| Base Cutoff Current | IBL | | | 50 | nA | VCE = 30 V, VBE = 3.0 V | 2 |+| Collector Cutoff Current | ICEX | | | 50 | nA | VCE = 30 V, VBE = 3.0 V | 2 |+| DC Current Gain | hFE | 60 | | | | IC = 0.1 mA, VCE = 1.0 V | 2 |+| DC Current Gain | hFE | 80 | | | | IC = 1.0 mA, VCE = 1.0 V | 2 |+| DC Current Gain | hFE | 100 | | | | IC = 10 mA, VCE = 1.0 V | 2 |+| DC Current Gain | hFE | 30 | | | | IC = 100 mA, VCE = 1.0 V | 2 |+| DC Current Gain | hFE | | | 300 | | | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC = 10 mA, IB = 1.0 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.4 | V | IC = 50 mA, IB = 5.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | 0.65 | | 0.85 | V | IC = 10 mA, IB = 1.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.95 | V | IC = 50 mA, IB = 5.0 mA | 2 |+| Current Gain - Bandwidth Product | fT | 250 | | | MHz | IC = 10 mA, VCE = 20 V, f = 100 MHz | 2 |+| Output Capacitance | Cobo | | | 4.5 | pF | VCB = 5.0 V, IE = 0, f = 100 kHz | 2 |+| Input Capacitance | Cibo | | | 10 | pF | VEB = 0.5 V, IC = 0, f = 100 kHz | 2 |+| Noise Figure | NF | | | 4 | dB | IC = 100 µA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz | 2 |+| Delay Time | td | | | 35 | ns | VCC = 3.0 V, VBE = 0.5 V | 2 |+| Rise Time | tr | | | 35 | ns | IC = 10 mA, IB1 = 1.0 mA | 2 |+| Storage Time | ts | | | 225 | ns | VCC = 3.0 V, IC = 10mA | 2 |+| Fall Time | tf | | | 75 | ns | IB1 = IB2 = 1.0 mA | 2 |+| Collector-Emitter Voltage | VCEO | | | 40 | V | | 1 |+| Collector-Base Voltage | VCBO | | | 40 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | 5 | V | | 1 |+| Collector Current - Continuous | IC | | | 200 | mA | | 1 |+| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Total Device Dissipation | PD | | | 625 | mW | TA = 25°C | 1 |+| Thermal Resistance, Junction to Case | RθJC | | | 83.3 | °C/W | | 1 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 200 | °C/W | | 1 |+ ## CAD (KiCad official) - Symbol: `Transistor_BJT:2N3906`
page.json+367@@ -123,6 +123,373 @@ "Power dissipation": "625 mW", "Pinout": "E-B-C (pin 1 = emitter)", "Package": "TO-92"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0173a9cdd84dfe57",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mA, IB = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 µA, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE = 10 µA, IC = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base Cutoff Current",+ "symbol": "IBL",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCE = 30 V, VBE = 3.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICEX",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCE = 30 V, VBE = 3.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "IC = 0.1 mA, VCE = 1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mA, VCE = 1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC = 100 mA, VCE = 1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "IC = 10 mA, IB = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "IC = 50 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.65,+ "typ": null,+ "max": 0.85,+ "conditions": "IC = 10 mA, IB = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.95,+ "conditions": "IC = 50 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 250,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 20 V, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cobo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = 5.0 V, IE = 0, f = 100 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Cibo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VEB = 0.5 V, IC = 0, f = 100 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "IC = 100 µA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Delay Time",+ "symbol": "td",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VCC = 3.0 V, VBE = 0.5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "IC = 10 mA, IB1 = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Time",+ "symbol": "ts",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "VCC = 3.0 V, IC = 10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "IB1 = IB2 = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 625,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 83.3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "sections": [