component
2N3906-338
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2N3906-338
ALJ · Bipolar (BJT) · TO-92
2N3906-338 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V minimum at IE = -10 µA and VEBO rated at -5 V. |
| 2 | Base | passive | Base terminal, with base-emitter saturation voltage VBE(sat) of -0.95 V maximum at IC = -50 mA and IB = -5 mA. |
| 3 | Collector | passive | Collector terminal, with collector-base voltage VCBO and collector-emitter voltage VCEO both rated at -40 V and collector current IC rated at -0.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | -40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | -40 | V | 1 | |||
| Emitter Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -0.2 | A | 1 | |||
| Collector Power Dissipation | PC | 0.625 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC = -10µA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC = -1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -10µA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -40V, IE = 0 | 1 | ||
| Collector cut-off current | ICEX | -50 | nA | VCE = -30V, VEB(off) = -3V | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -5V, IC = 0 | 1 | ||
| DC current gain | hFE(1) | 100 | VCE = -5V, IC = -1mA | 1 | |||
| DC current gain | hFE(2) | 200 | 400 | VCE = -1V, IC = -10mA | 1 | ||
| DC current gain | hFE(3) | 60 | VCE = -1V, IC = -50mA | 1 | |||
| DC current gain | hFE(4) | 30 | VCE = -1V, IC = -100mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC = -50mA, IB = -5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC = -50mA, IB = -5mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 1 | ||
| Delay time | td | 35 | ns | VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = -1mA | 1 | ||
| Rise time | tr | 35 | ns | 1 | |||
| Storage time | ts | 225 | ns | VCC = -3V, Ic = -10mA, IB1 = IB2 = -1mA | 1 | ||
| Fall time | tf | 75 | ns | 1 |
CAD (KiCad official)
- Symbol:
2N3906-338 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2n3906-338-etched.step/2n3906-338-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n3906-338.step/2n3906-338.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (2 pp, sha256
ced6de7434004fca, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2N3906-338
**ALJ** · Bipolar (BJT) · TO-92
2N3906-338 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V minimum at IE = -10 µA and VEBO rated at -5 V. |
| 2 | Base | passive | Base terminal, with base-emitter saturation voltage VBE(sat) of -0.95 V maximum at IC = -50 mA and IB = -5 mA. |
| 3 | Collector | passive | Collector terminal, with collector-base voltage VCBO and collector-emitter voltage VCEO both rated at -40 V and collector current IC rated at -0.2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | | | -40 | V | | 1 |
| Collector Emitter Voltage | VCEO | | | -40 | V | | 1 |
| Emitter Base Voltage | VEBO | | | -5 | V | | 1 |
| Collector Current | IC | | | -0.2 | A | | 1 |
| Collector Power Dissipation | PC | | | 0.625 | mW | | 1 |
| Junction Temperature | Tj | | | 150 | °C | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | °C | | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -40 | | | V | IC = -10µA, IE = 0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | | | V | IC = -1mA, IB = 0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE = -10µA, IC = 0 | 1 |
| Collector cut-off current | ICBO | | | -100 | nA | VCB = -40V, IE = 0 | 1 |
| Collector cut-off current | ICEX | | | -50 | nA | VCE = -30V, VEB(off) = -3V | 1 |
| Emitter cut-off current | IEBO | | | -100 | nA | VEB = -5V, IC = 0 | 1 |
| DC current gain | hFE(1) | 100 | | | | VCE = -5V, IC = -1mA | 1 |
| DC current gain | hFE(2) | 200 | | 400 | | VCE = -1V, IC = -10mA | 1 |
| DC current gain | hFE(3) | 60 | | | | VCE = -1V, IC = -50mA | 1 |
| DC current gain | hFE(4) | 30 | | | | VCE = -1V, IC = -100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.4 | V | IC = -50mA, IB = -5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | -0.95 | V | IC = -50mA, IB = -5mA | 1 |
| Transition frequency | fT | 250 | | | MHz | VCE=-20V, IC=-10mA, f=100MHz | 1 |
| Delay time | td | | | 35 | ns | VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = -1mA | 1 |
| Rise time | tr | | | 35 | ns | | 1 |
| Storage time | ts | | | 225 | ns | VCC = -3V, Ic = -10mA, IB1 = IB2 = -1mA | 1 |
| Fall time | tf | | | 75 | ns | | 1 |
## CAD (KiCad official)
- Symbol: `2N3906-338`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `2n3906-338-etched.step` / `2n3906-338-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n3906-338.step` / `2n3906-338.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ALJ datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603352158519906304) (2 pp, sha256 `ced6de7434004fca`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2n3906-338-datasheet.pdf)