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2N3906-338

ALJ · Bipolar (BJT) · TO-92

2N3906-338 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5 V minimum at IE = -10 µA and VEBO rated at -5 V.
2 Base passive Base terminal, with base-emitter saturation voltage VBE(sat) of -0.95 V maximum at IC = -50 mA and IB = -5 mA.
3 Collector passive Collector terminal, with collector-base voltage VCBO and collector-emitter voltage VCEO both rated at -40 V and collector current IC rated at -0.2 A.

Key specifications

Parameter Value
Manufacturer ALJ
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO -40 V 1
Collector Emitter Voltage VCEO -40 V 1
Emitter Base Voltage VEBO -5 V 1
Collector Current IC -0.2 A 1
Collector Power Dissipation PC 0.625 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Collector-base breakdown voltage V(BR)CBO -40 V IC = -10µA, IE = 0 1
Collector-emitter breakdown voltage V(BR)CEO -40 V IC = -1mA, IB = 0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -10µA, IC = 0 1
Collector cut-off current ICBO -100 nA VCB = -40V, IE = 0 1
Collector cut-off current ICEX -50 nA VCE = -30V, VEB(off) = -3V 1
Emitter cut-off current IEBO -100 nA VEB = -5V, IC = 0 1
DC current gain hFE(1) 100 VCE = -5V, IC = -1mA 1
DC current gain hFE(2) 200 400 VCE = -1V, IC = -10mA 1
DC current gain hFE(3) 60 VCE = -1V, IC = -50mA 1
DC current gain hFE(4) 30 VCE = -1V, IC = -100mA 1
Collector-emitter saturation voltage VCE(sat) -0.4 V IC = -50mA, IB = -5mA 1
Base-emitter saturation voltage VBE(sat) -0.95 V IC = -50mA, IB = -5mA 1
Transition frequency fT 250 MHz VCE=-20V, IC=-10mA, f=100MHz 1
Delay time td 35 ns VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = -1mA 1
Rise time tr 35 ns 1
Storage time ts 225 ns VCC = -3V, Ic = -10mA, IB1 = IB2 = -1mA 1
Fall time tf 75 ns 1

CAD (KiCad official)

  • Symbol: 2N3906-338
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n3906-338-etched.step / 2n3906-338-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3906-338.step / 2n3906-338.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALJ datasheet (2 pp, sha256 ced6de7434004fca, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF