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2EDL05N06PF

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Infineon Technologies Gate Drive ICs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2EDL05N06PF

Infineon Technologies · Gate Drive ICs · SOP-8

2EDL05N06PF from Infineon Technologies, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Low-side and logic supply voltage, operating range 10 V to 17.5 V for MOSFET types (absolute max 20 V).
2 HIN input Logic input for high-side gate driver output (HO), in phase, Schmitt trigger input with hysteresis and pull-down.
3 LIN input Logic input for low-side gate driver output (LO), in phase, Schmitt trigger input with hysteresis and pull-down.
4 GND power_in Low-side gate drive return and ground reference for logic inputs.
5 LO output Low-side driver output with 0.36 A source / 0.7 A sink peak current.
6 VS power_in High voltage floating supply return, tolerant to negative transients down to -100 V (tp<300 ns) and max 600 V.
7 HO output High-side driver output with 0.36 A source / 0.7 A sink peak current.
8 VB power_in High-side gate drive floating supply, max 620 V absolute, VBS operating 10 V to 17.5 V for MOSFET types.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOP-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High side offset voltage VS VS 600 V min is VDD-VBS-6 9
High side offset voltage VB VB 620 V min is VDD-6 9
High side floating supply voltage (VB vs. VS) VBS -1 20 V internally clamped 9
High side output voltage (VHO vs. VS) VHO -0.5 V max is VB + 0.5 9
Low side supply voltage VDD -1 20 V internally clamped 9
Low side output voltage (VLO vs. VGND) VLO -0.5 V max is VGND + 0.5 9
Input voltage LIN,HIN VIN -0.5 V max is VDD + 0.5 9
Power dissipation DSO8 PD 0.6 W Ta=25°C 9
Thermal resistance junction to ambient DSO8 Rth(j-a) 195 K/W 9
Junction temperature TJ 150 °C 9
Storage temperature TS -40 150 °C 9
Offset voltage slew rate dVS/dt 50 V/ns 9
High side offset voltage (required) VB 7 620 V 10
Low side supply voltage (required) VDD 10 20 V internally clamped 10
High side floating supply offset voltage VS 500 V min is VDD - VBS -1 10
High side floating supply offset voltage (VB vs. VDD, statically) VBDD -1 500 V 10
High side floating supply voltage MOSFET-Types VBS 10 17.5 V 10
High side output voltage (VHO vs. VS) VHO 0 V max is VBS 10
Low side output voltage (VLO vs. VGND) VLO 0 V max is VDD 10
Low side supply voltage MOSFET-Types VDD 10 17.5 V 10
Logic input voltages LIN,HIN VIN 0 17.5 V 10
Pulse width for ON or OFF MOSFET-Types tIN 0.3 µs 10
Ambient temperature Ta -40 105 °C 10
Thermal coefficient junction to top DSO8 Ψth(j-top) 8 K/W 10
High level input voltage VIH 1.7 2.1 2.4 V VDD = VBS = 15V, Ta=25°C 11
Low level input voltage VIL 0.7 0.9 1.1 V VDD = VBS = 15V, Ta=25°C 11
High level output voltage LO (VDD-) VOH 0.45 1 V IO = -20 mA; printed as VDD -0.45 typ, VDD -1 max 11
Low level output voltage LO (above VGND) VOL 0.13 0.3 V IO = 20 mA; printed as VGND+0.13 typ, VGND+0.3 max 11
VDD supply undervoltage positive going threshold MOSFET VDDUV+ 8.3 9.1 9.9 V 11
VBS supply undervoltage positive going threshold MOSFET VBSUV+ 8.3 9.1 9.9 V 11
VDD supply undervoltage negative going threshold MOSFET VDDUV- 7.5 8.3 9 V 11
VBS supply undervoltage negative going threshold MOSFET VBSUV- 7.5 8.3 9 V 11
VDD and VBS supply UVLO hysteresis MOSFET VDDUVH, VBSUVH 0.5 0.9 V 11
High side leakage current betw. VS and GND ILVS+ 1 12.5 µA VS = 600V 11
Quiescent current VBS supply IQBS1 170 300 µA HO = low 11
Quiescent current VDD supply IQDD1 0.3 0.6 mA VLIN = float. 11
Quiescent current VDD supply IQDD2 0.28 0.6 mA VLIN = 3.3 V, VHIN=0 12
Input bias current ILIN+ 15 35 60 µA VLIN = 3.3 V 12
Mean output current charging IO+ 0.18 0.23 A CL = 22 nF 12
Mean output current discharging IO- 0.39 0.48 A CL = 22 nF 12
Bootstrap diode forward voltage between VDD and VB VF,BSD 1 1.2 V IF = 0.3 mA 12
Bootstrap diode forward current between VDD and VB IF,BSD 30 55 80 mA VDD, VB = 4 V 12
Bootstrap diode resistance RBSD 20 36 54 Ω VF1 = 4 V, VF2 = 5 V 12
Turn-on propagation delay MOSFET types ton 210 310 460 ns VLIN/HIN = 0 or 3.3 V 13
Turn-off propagation delay MOSFET types toff 200 300 440 ns VLIN/HIN = 0 or 3.3 V 13
Turn-on rise time tr 48 80 ns CL = 1 nF 13
Turn-off fall time tf 24 40 ns CL = 1 nF 13
Input filter time HIN MOSFET types tFILIN 50 100 170 ns VLIN/HIN = 0 & 3.3 V 13
Input filter time LIN MOSFET types tFILIN 100 150 250 ns VLIN/HIN = 0 & 3.3 V 13
Dead time MOSFET types DT 30 75 140 ns VLIN/HIN = 0 & 3.3 V 13
Dead time matching MOSFET types MDT 10 50 ns ext. dead time 0ns 13
Matching delay ON MTON 10 60 ns external dead time > 500 ns 13
Matching delay OFF MTOFF 10 60 ns external dead time >500 ns 13
Output pulse width matching MOSFET types PM 20 70 ns PWin > 1 µs 13
Peak output current turn on IOpk+ 0.36 A RL = 0 Ω, tp <10 µs 12
Peak output current turn off IOpk- 0.7 A RL = 0 Ω, tp <10 µs 12

CAD (KiCad official)

  • Symbol: 2EDL05N06PF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 2edl05n06pf-etched.step / 2edl05n06pf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2edl05n06pf.step / 2edl05n06pf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (21 pp, sha256 a53bbbfb0e8aaad4, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF