component
2222A
Public Made by Adomby adom
MOT Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2222A
MOT · Bipolar (BJT) · SOT-23
2222A from MOT, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only the absolute maximum ratings for the device (VEBO 6 V, IC 600 mA continuous). |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, with the emitter-base voltage limited to 6 V (VEBO) by the maximum ratings. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for 75 V collector-base (VCBO), 40 V collector-emitter (VCEO), and 600 mA continuous collector current (IC). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 75 | V | IC=10μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.01 | μA | VCB=60V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=3V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 100 | 300 | VCE=10V, IC=150mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) | 2 | ||
| DC current gain | hFE(2) | 40 | VCE=10V, IC=0.1mA | 2 | |||
| DC current gain | hFE(3) | 42 | VCE=10V, IC=500mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=500mA, IB=50mA (pulse test) | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=150mA, IB=15mA (pulse test) | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 2 | V | IC=500mA, IB=50mA (pulse test) | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=150mA, IB=15mA (pulse test) | 2 | ||
| Transition frequency | fT | 300 | MHz | VCE=20V, IC=20mA, f=100MHz | 2 | ||
| Delay time | td | 10 | ns | VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA | 2 | ||
| Rise time | tr | 25 | ns | VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA | 2 | ||
| Storage time | tS | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 | ||
| Fall time | tf | 60 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 | ||
| Collector-base voltage | VCBO | 75 | V | 1 | |||
| Collector-emitter voltage | VCEO | 40 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current, continuous | IC | 600 | mA | 1 | |||
| Collector dissipation | PC | 300 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2222A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2222a-etched.step/2222a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2222a.step/2222a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (5 pp, sha256
5d04d271335b7a34, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2222A
**MOT** · Bipolar (BJT) · SOT-23
2222A from MOT, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only the absolute maximum ratings for the device (VEBO 6 V, IC 600 mA continuous). |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, with the emitter-base voltage limited to 6 V (VEBO) by the maximum ratings. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for 75 V collector-base (VCBO), 40 V collector-emitter (VCEO), and 600 mA continuous collector current (IC). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 75 | | | V | IC=10μA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | | | V | IC=10mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=10μA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | 0.01 | μA | VCB=60V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | μA | VEB=3V, IC=0 | 2 |
| DC current gain | hFE(1) | 100 | | 300 | | VCE=10V, IC=150mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) | 2 |
| DC current gain | hFE(2) | 40 | | | | VCE=10V, IC=0.1mA | 2 |
| DC current gain | hFE(3) | 42 | | | | VCE=10V, IC=500mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 1 | V | IC=500mA, IB=50mA (pulse test) | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.3 | V | IC=150mA, IB=15mA (pulse test) | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 2 | V | IC=500mA, IB=50mA (pulse test) | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC=150mA, IB=15mA (pulse test) | 2 |
| Transition frequency | fT | 300 | | | MHz | VCE=20V, IC=20mA, f=100MHz | 2 |
| Delay time | td | | | 10 | ns | VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA | 2 |
| Rise time | tr | | | 25 | ns | VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA | 2 |
| Storage time | tS | | | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 |
| Fall time | tf | | | 60 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 |
| Collector-base voltage | VCBO | | | 75 | V | | 1 |
| Collector-emitter voltage | VCEO | | | 40 | V | | 1 |
| Emitter-base voltage | VEBO | | | 6 | V | | 1 |
| Collector current, continuous | IC | | | 600 | mA | | 1 |
| Collector dissipation | PC | | | 300 | mW | | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction to ambient | RΘJA | | | 417 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `2222A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2222a-etched.step` / `2222a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2222a.step` / `2222a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590297247528759296) (5 pp, sha256 `5d04d271335b7a34`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2222a-datasheet.pdf)