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2222A

MOT · Bipolar (BJT) · SOT-23

2222A from MOT, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only the absolute maximum ratings for the device (VEBO 6 V, IC 600 mA continuous).
2 Emitter passive Emitter terminal of the NPN transistor, with the emitter-base voltage limited to 6 V (VEBO) by the maximum ratings.
3 Collector passive Collector terminal of the NPN transistor, rated for 75 V collector-base (VCBO), 40 V collector-emitter (VCEO), and 600 mA continuous collector current (IC).

Key specifications

Parameter Value
Manufacturer MOT
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 75 V IC=10μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μA, IC=0 2
Collector cut-off current ICBO 0.01 μA VCB=60V, IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB=3V, IC=0 2
DC current gain hFE(1) 100 300 VCE=10V, IC=150mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) 2
DC current gain hFE(2) 40 VCE=10V, IC=0.1mA 2
DC current gain hFE(3) 42 VCE=10V, IC=500mA (pulse test: pulse width ≤300μs, duty cycle ≤2.0%) 2
Collector-emitter saturation voltage VCE(sat) 1 V IC=500mA, IB=50mA (pulse test) 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150mA, IB=15mA (pulse test) 2
Base-emitter saturation voltage VBE(sat) 2 V IC=500mA, IB=50mA (pulse test) 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC=150mA, IB=15mA (pulse test) 2
Transition frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 2
Delay time td 10 ns VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA 2
Rise time tr 25 ns VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA 2
Storage time tS 225 ns VCC=30V, IC=150mA, IB1=-IB2=15mA 2
Fall time tf 60 ns VCC=30V, IC=150mA, IB1=-IB2=15mA 2
Collector-base voltage VCBO 75 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current, continuous IC 600 mA 1
Collector dissipation PC 300 mW 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RΘJA 417 ℃/W 1

CAD (KiCad official)

  • Symbol: 2222A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2222a-etched.step / 2222a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2222a.step / 2222a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (5 pp, sha256 5d04d271335b7a34, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF