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20N10

Public Made by Adom

by adom

HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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20N10

HL · MOSFETs · TO-252

20N10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain, connected to the exposed tab, with a maximum drain-source voltage of 100 V and 20 A continuous drain current at TC=25°C.
3 S passive Source of the N-channel MOSFET, with a body diode continuous source current of 20 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer HL
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250µA 2
Gate-body leakage current IGSS -100 100 nA V=0V, V=±20V (subscripts lost in extraction) 2
Zero gate voltage drain current, TJ=25°C IDSS 1 µA TJ=25°C, VDS=100V, VGS=0V 2
Zero gate voltage drain current, TJ=100°C IDSS 100 µA TJ=100°C, VDS=100V, VGS=0V 2
Gate-threshold voltage VGS(th) 1.2 2.5 V VDS=VGS, ID=250µA 2
Drain-source on-resistance RDS(on) 65 90 mΩ VGS=10V, ID=5A 2
Drain-source on-resistance RDS(on) 75 105 mΩ VGS=4.5V, ID=3A 2
Diode forward voltage VSD 1.2 V IS=1A, VGS=0V 2
Continuous source current IS 20 A TC=25°C 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 20 A TC=25°C, VGS=10V 1
Continuous Drain Current ID 12 A TC=100°C, VGS=10V 1
Pulsed Drain Current IDM 20 A 1
Single Pulse Avalanche Energy EAS 4.1 mJ 1
Avalanche Current IAS 10 A 1
Total Power Dissipation PD 41.7 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-ambient RθJA 50 °C/W 1
Thermal Resistance Junction-Case RθJC 3 °C/W 1

CAD (KiCad official)

  • Symbol: 20N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 20n10-etched.step / 20n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 20n10.step / 20n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 4aa02903a4785ca1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF