component
20N10
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown20N10
HL · MOSFETs · TO-252
20N10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain, connected to the exposed tab, with a maximum drain-source voltage of 100 V and 20 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, with a body diode continuous source current of 20 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | V=0V, V=±20V (subscripts lost in extraction) | 2 | |
| Zero gate voltage drain current, TJ=25°C | IDSS | 1 | µA | TJ=25°C, VDS=100V, VGS=0V | 2 | ||
| Zero gate voltage drain current, TJ=100°C | IDSS | 100 | µA | TJ=100°C, VDS=100V, VGS=0V | 2 | ||
| Gate-threshold voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 65 | 90 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-source on-resistance | RDS(on) | 75 | 105 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Diode forward voltage | VSD | 1.2 | V | IS=1A, VGS=0V | 2 | ||
| Continuous source current | IS | 20 | A | TC=25°C | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 20 | A | TC=25°C, VGS=10V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC=100°C, VGS=10V | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 4.1 | mJ | 1 | |||
| Avalanche Current | IAS | 10 | A | 1 | |||
| Total Power Dissipation | PD | 41.7 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | °C/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
20N10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
20n10-etched.step/20n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);20n10.step/20n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
4aa02903a4785ca1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).