component
20N06
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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20n06: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
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9d ago
20N06
UMW · MOSFETs · TO-252
20N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal (GATE) of the 60 V N-channel MOSFET; the absolute maximum gate-source voltage VGS is ±20 V. |
| 2 | D | passive | Drain terminal (DRAIN) of the MOSFET; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current ID is 20 A at TC=25°C. |
| 3 | S | passive | Source terminal (SOURCE) of the MOSFET; the datasheet gives no pin-specific limit beyond the device ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, IDS=250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, IDS=250µA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 23 | 35 | mΩ | VGS=10V, IDS=15A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 29 | 40 | mΩ | VGS=4.5V, IDS=10A | 3 | |
| Drain-Source Voltage | VDS | 60 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Drain Current-Continuous | ID | 20 | A | TC=25°C | 1 | ||
| Drain Current-Continuous | ID | 14 | A | TC=100°C | 1 | ||
| Drain Current-Pulsed | IDM | 120 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy | EAS | 72 | mJ | Note 4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C | 1 | ||
| Maximum Power Dissipation | PD | 55 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Input Capacitance | Ciss | 1562 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 75.4 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 66.8 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | ||
| Turn-On Delay Time | tD(on) | 7.5 | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 | ||
| Rise Time | tr | 21 | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 | ||
| Turn-Off Delay Time | tD(off) | 16 | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 | ||
| Fall Time | tf | 23.5 | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 | ||
| Total Gate Charge at 10V | Qg | 25 | nC | VDS=30V, IDS=15A, VGS=10V | 3 | ||
| Gate to Source Gate Charge | Qgs | 4.5 | nC | VDS=30V, IDS=15A, VGS=10V | 3 | ||
| Gate to Drain Miller Charge | Qgd | 6.5 | nC | VDS=30V, IDS=15A, VGS=10V | 3 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IDS=15A | 4 | ||
| Reverse Recovery Time | trr | 29 | nS | TJ=25°C, IF=15A, dI/dt=100A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 45 | uC | TJ=25°C, IF=15A, dI/dt=100A/μs | 4 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.7 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient (figure note) | RθJA | 125 | °C/W | Printed as note to Figure 11 (transient thermal impedance); surface mounted on FR4, t≤10 sec per Note 2 | 6 |
CAD (KiCad official)
- Symbol:
20N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
20n06-etched.step/20n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);20n06.step/20n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
2d94cb14e13c42bf, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 20N06
**UMW** · MOSFETs · TO-252
20N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal (GATE) of the 60 V N-channel MOSFET; the absolute maximum gate-source voltage VGS is ±20 V. |
| 2 | D | passive | Drain terminal (DRAIN) of the MOSFET; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current ID is 20 A at TC=25°C. |
| 3 | S | passive | Source terminal (SOURCE) of the MOSFET; the datasheet gives no pin-specific limit beyond the device ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, IDS=250µA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 3 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, IDS=250µA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 23 | 35 | mΩ | VGS=10V, IDS=15A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 29 | 40 | mΩ | VGS=4.5V, IDS=10A | 3 |
| Drain-Source Voltage | VDS | | | 60 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25°C | 1 |
| Drain Current-Continuous | ID | | | 20 | A | TC=25°C | 1 |
| Drain Current-Continuous | ID | | | 14 | A | TC=100°C | 1 |
| Drain Current-Pulsed | IDM | | | 120 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Avalanche Energy | EAS | | | 72 | mJ | Note 4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C | 1 |
| Maximum Power Dissipation | PD | | | 55 | W | TC=25°C | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Input Capacitance | Ciss | | 1562 | | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 75.4 | | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 66.8 | | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 7.5 | | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 |
| Rise Time | tr | | 21 | | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 |
| Turn-Off Delay Time | tD(off) | | 16 | | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 |
| Fall Time | tf | | 23.5 | | ns | VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A | 3 |
| Total Gate Charge at 10V | Qg | | 25 | | nC | VDS=30V, IDS=15A, VGS=10V | 3 |
| Gate to Source Gate Charge | Qgs | | 4.5 | | nC | VDS=30V, IDS=15A, VGS=10V | 3 |
| Gate to Drain Miller Charge | Qgd | | 6.5 | | nC | VDS=30V, IDS=15A, VGS=10V | 3 |
| Drain-Source Diode Forward Voltage | VSD | | 1.2 | | V | VGS=0V, IDS=15A | 4 |
| Reverse Recovery Time | trr | | 29 | | nS | TJ=25°C, IF=15A, dI/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr | | 45 | | uC | TJ=25°C, IF=15A, dI/dt=100A/μs | 4 |
| Thermal Resistance, Junction-to-Case | RθJC | | 2.7 | | °C/W | | 2 |
| Thermal Resistance, Junction-to-Ambient (figure note) | RθJA | | 125 | | °C/W | Printed as note to Figure 11 (transient thermal impedance); surface mounted on FR4, t≤10 sec per Note 2 | 6 |
## CAD (KiCad official)
- Symbol: `20N06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `20n06-etched.step` / `20n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `20n06.step` / `20n06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755874484567838720) (10 pp, sha256 `2d94cb14e13c42bf`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/20n06-datasheet.pdf)