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Contents

README

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20N06

UMW · MOSFETs · TO-252

20N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal (GATE) of the 60 V N-channel MOSFET; the absolute maximum gate-source voltage VGS is ±20 V.
2 D passive Drain terminal (DRAIN) of the MOSFET; the absolute maximum drain-source voltage VDS is 60 V and continuous drain current ID is 20 A at TC=25°C.
3 S passive Source terminal (SOURCE) of the MOSFET; the datasheet gives no pin-specific limit beyond the device ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, IDS=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 3
Gate-Body Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, IDS=250µA 3
Drain-Source On-State Resistance RDS(ON) 23 35 mΩ VGS=10V, IDS=15A 3
Drain-Source On-State Resistance RDS(ON) 29 40 mΩ VGS=4.5V, IDS=10A 3
Drain-Source Voltage VDS 60 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Drain Current-Continuous ID 20 A TC=25°C 1
Drain Current-Continuous ID 14 A TC=100°C 1
Drain Current-Pulsed IDM 120 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Avalanche Energy EAS 72 mJ Note 4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C 1
Maximum Power Dissipation PD 55 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Input Capacitance Ciss 1562 pF VDS=25V, VGS=0V, f=1MHz 3
Output Capacitance Coss 75.4 pF VDS=25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 66.8 pF VDS=25V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 7.5 ns VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A 3
Rise Time tr 21 ns VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A 3
Turn-Off Delay Time tD(off) 16 ns VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A 3
Fall Time tf 23.5 ns VGS=10V, VDS=30V, RGEN=1.8Ω, ID=15A 3
Total Gate Charge at 10V Qg 25 nC VDS=30V, IDS=15A, VGS=10V 3
Gate to Source Gate Charge Qgs 4.5 nC VDS=30V, IDS=15A, VGS=10V 3
Gate to Drain Miller Charge Qgd 6.5 nC VDS=30V, IDS=15A, VGS=10V 3
Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V, IDS=15A 4
Reverse Recovery Time trr 29 nS TJ=25°C, IF=15A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 45 uC TJ=25°C, IF=15A, dI/dt=100A/μs 4
Thermal Resistance, Junction-to-Case RθJC 2.7 °C/W 2
Thermal Resistance, Junction-to-Ambient (figure note) RθJA 125 °C/W Printed as note to Figure 11 (transient thermal impedance); surface mounted on FR4, t≤10 sec per Note 2 6

CAD (KiCad official)

  • Symbol: 20N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 20n06-etched.step / 20n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 20n06.step / 20n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 2d94cb14e13c42bf, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF