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2080K

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Shenzhen Fuman MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors2080kfactory-2.0.0extractor-text

Verified 2080K

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: 2080K · TO-252-2 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ju2odmwk/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ 2080k.kicad_sym✓ 2080k.kicad_mod✓ 2080k.step
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2080K

Shenzhen Fuman · MOSFETs · TO-252-2

2080K from Shenzhen Fuman, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS limited to ±12 V maximum, with a typical gate threshold of 0.8 V (0.4 to 1.2 V) and RDS(on) specified at VGS = 4.5 V and 2.5 V.
2 D passive Drain, connected to the exposed tab (D / Case) and to the truncated centre lead position; VDS maximum 20 V and continuous drain current 80 A at TC = 25 °C.
3 S passive Source; carries the continuous diode forward current up to 80 A, with a pulsed current of 240 A.

Key specifications

Parameter Value
Manufacturer Shenzhen Fuman
Package TO-252-2
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V TC=25℃ 1
Gate-Source Voltage VGS -12 12 V TC=25℃ 1
Continuous Drain Current ID 80 A TC = 25℃ 1
Continuous Drain Current ID 58 A TC = 100℃ 1
Pulsed Drain Current IDM 240 A note1 1
Single Pulsed Avalanche Energy EAS 196 mJ note2 1
Power Dissipation PD 88 W TC = 25℃ 1
Power Dissipation Derating PD 0.54 W/℃ Derate above 25℃ 1
Thermal Resistance, Junction to Case RθJC 1.85 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0 V, ID = 250 μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 24 V, VGS = 0 V 2
Gate Leakage Current, Forward IGSSF 100 nA VGS = 12 V, VDS = 0 V 2
Gate Leakage Current, Reverse IGSSR -100 nA VGS = -12 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 0.4 0.8 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 3.4 4.5 mΩ VGS=4.5V, ID=30A 2
Drain-Source On-State Resistance RDS(ON) 4.2 6 mΩ VGS=2.5V, ID=20A 2
Maximum Continuous Drain-Source Diode Forward Current IS 80 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 240 A 2
Diode Forward Voltage VSD 1.2 V VGS= 0 V, IS = 30 A 2
Input Capacitance Ciss 2560 pF VDS=10V,VGS=0V, f=1.0MHz 2
Output Capacitance Coss 368 pF VDS=10V,VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 356 pF VDS=10V,VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 7.8 nS VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω 2
Turn-on Rise Time tr 30 nS VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω 2
Turn-Off Delay Time td(off) 50 nS VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω 2
Turn-Off Fall Time tf 42 nS VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω 2
Total Gate Charge Qg 38 nC VDS =10V, ID =30A, VGS =4.5V 2
Gate-Source Charge Qgs 2.9 nC VDS =10V, ID =30A, VGS =4.5V 2
Gate-Drain Charge Qgd 15 nC VDS =10V, ID =30A, VGS =4.5V 2
Reverse recovery time Trr 18 ns IF=30A, di/dt=100A/μS 2
Reverse recovery charge Qrr 8 nC IF=30A, di/dt=100A/μS 2

CAD (KiCad official)

  • Symbol: 2080K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: 2080k-etched.step / 2080k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2080k.step / 2080k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Fuman datasheet (6 pp, sha256 b5de1bb2f1c157cf, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF