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2080K
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Shenzhen Fuman MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2080K
Shenzhen Fuman · MOSFETs · TO-252-2
2080K from Shenzhen Fuman, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS limited to ±12 V maximum, with a typical gate threshold of 0.8 V (0.4 to 1.2 V) and RDS(on) specified at VGS = 4.5 V and 2.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab (D / Case) and to the truncated centre lead position; VDS maximum 20 V and continuous drain current 80 A at TC = 25 °C. |
| 3 | S | passive | Source; carries the continuous diode forward current up to 80 A, with a pulsed current of 240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Fuman |
| Package | TO-252-2 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | 80 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 58 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 196 | mJ | note2 | 1 | ||
| Power Dissipation | PD | 88 | W | TC = 25℃ | 1 | ||
| Power Dissipation Derating | PD | 0.54 | W/℃ | Derate above 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.85 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 24 V, VGS = 0 V | 2 | ||
| Gate Leakage Current, Forward | IGSSF | 100 | nA | VGS = 12 V, VDS = 0 V | 2 | ||
| Gate Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -12 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.8 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.4 | 4.5 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 4.2 | 6 | mΩ | VGS=2.5V, ID=20A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 80 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 240 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS= 0 V, IS = 30 A | 2 | ||
| Input Capacitance | Ciss | 2560 | pF | VDS=10V,VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 368 | pF | VDS=10V,VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 356 | pF | VDS=10V,VGS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 7.8 | nS | VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω | 2 | ||
| Turn-on Rise Time | tr | 30 | nS | VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 50 | nS | VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω | 2 | ||
| Turn-Off Fall Time | tf | 42 | nS | VDS =10V, ID =30A, VGS =4.5V, RG =1.8Ω | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VDS =10V, ID =30A, VGS =4.5V | 2 | ||
| Gate-Source Charge | Qgs | 2.9 | nC | VDS =10V, ID =30A, VGS =4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VDS =10V, ID =30A, VGS =4.5V | 2 | ||
| Reverse recovery time | Trr | 18 | ns | IF=30A, di/dt=100A/μS | 2 | ||
| Reverse recovery charge | Qrr | 8 | nC | IF=30A, di/dt=100A/μS | 2 |
CAD (KiCad official)
- Symbol:
2080K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
2080k-etched.step/2080k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2080k.step/2080k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen Fuman datasheet (6 pp, sha256
b5de1bb2f1c157cf, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).