component
1N60L-T92-B
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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1N60L-T92-B
UTC(Unisonic Tech) · MOSFETs · TO-92
1N60L-T92-B from UTC(Unisonic Tech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGSS limited to ±30 V and VGS(TH) of 2.0 V min to 4.0 V max at ID=250μA. |
| 2 | D | passive | Drain; rated for VDSS of 600 V and continuous drain current ID of 1.2 A (4.8 A pulsed). |
| 3 | S | passive | Source; connects to the source side of the MOSFET and its body diode, with continuous diode forward current IS of 1.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | TC=25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 3 | |
| Avalanche Current | IAR | 1.2 | A | TC=25°C | 3 | ||
| Continuous Drain Current | ID | 1.2 | A | TC=25°C | 3 | ||
| Pulsed Drain Current | IDM | 4.8 | A | TC=25°C | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 50 | mJ | L=60mH, IAS=1A, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 | ||
| Repetitive Avalanche Energy | EAR | 4 | mJ | TC=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤1.2A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation TO-92 | PD | 1 | W | TA=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Thermal Resistance Junction to Ambient TO-92 | θJA | 140 | °C/W | TO-92 | 3 | ||
| Thermal Resistance Junction to Case TO-92 | θJC | 80 | °C/W | TO-92 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=600V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 9.3 | 11.5 | Ω | VGS=10V, ID=0.6A | 4 | |
| Input Capacitance | CISS | 120 | 150 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Output Capacitance | COSS | 20 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 3 | 4 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Total Gate Charge | QG | 5 | 6 | nC | VDS=480V, VGS=10V, ID=1.2A | 4 | |
| Turn-On Delay Time | tD(ON) | 5 | 20 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 | |
| Turn-On Rise Time | tR | 25 | 60 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 | |
| Turn-Off Delay Time | tD(OFF) | 7 | 25 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 | |
| Turn-Off Fall Time | tF | 25 | 60 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 1.2 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 4.8 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=1.2A | 4 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.4 | V/℃ | ID=250μA | 4 | ||
| Gate-Source Charge | QGS | 1 | nC | VDS=480V, VGS=10V, ID=1.2A | 4 | ||
| Gate-Drain Charge | QGD | 2.6 | nC | VDS=480V, VGS=10V, ID=1.2A | 4 | ||
| Reverse Recovery Time | trr | 160 | ns | VGS=0V, IS=1.2A, dIF/dt=100A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 0.3 | μC | VGS=0V, IS=1.2A, dIF/dt=100A/μs | 4 |
CAD (KiCad official)
- Symbol:
1N60L-T92-B - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
1n60l-t92-b-etched.step/1n60l-t92-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1n60l-t92-b.step/1n60l-t92-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
edfb82a178fee187, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 1N60L-T92-B
**UTC(Unisonic Tech)** · MOSFETs · TO-92
1N60L-T92-B from UTC(Unisonic Tech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGSS limited to ±30 V and VGS(TH) of 2.0 V min to 4.0 V max at ID=250μA. |
| 2 | D | passive | Drain; rated for VDSS of 600 V and continuous drain current ID of 1.2 A (4.8 A pulsed). |
| 3 | S | passive | Source; connects to the source side of the MOSFET and its body diode, with continuous diode forward current IS of 1.2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-92 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 600 | V | TC=25°C | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | TC=25°C | 3 |
| Avalanche Current | IAR | | | 1.2 | A | TC=25°C | 3 |
| Continuous Drain Current | ID | | | 1.2 | A | TC=25°C | 3 |
| Pulsed Drain Current | IDM | | | 4.8 | A | TC=25°C | 3 |
| Single Pulsed Avalanche Energy | EAS | | | 50 | mJ | L=60mH, IAS=1A, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 |
| Repetitive Avalanche Energy | EAR | | | 4 | mJ | TC=25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD≤1.2A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 3 |
| Power Dissipation TO-92 | PD | | | 1 | W | TA=25°C | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Operating Temperature | TOPR | -55 | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Thermal Resistance Junction to Ambient TO-92 | θJA | | | 140 | °C/W | TO-92 | 3 |
| Thermal Resistance Junction to Case TO-92 | θJC | | | 80 | °C/W | TO-92 | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 600 | | | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS=600V, VGS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 9.3 | 11.5 | Ω | VGS=10V, ID=0.6A | 4 |
| Input Capacitance | CISS | | 120 | 150 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Output Capacitance | COSS | | 20 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 3 | 4 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Total Gate Charge | QG | | 5 | 6 | nC | VDS=480V, VGS=10V, ID=1.2A | 4 |
| Turn-On Delay Time | tD(ON) | | 5 | 20 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 |
| Turn-On Rise Time | tR | | 25 | 60 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 |
| Turn-Off Delay Time | tD(OFF) | | 7 | 25 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 |
| Turn-Off Fall Time | tF | | 25 | 60 | ns | VDD=300V, ID=1.2A, RG=50Ω | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 1.2 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 4.8 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V, IS=1.2A | 4 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.4 | | V/℃ | ID=250μA | 4 |
| Gate-Source Charge | QGS | | 1 | | nC | VDS=480V, VGS=10V, ID=1.2A | 4 |
| Gate-Drain Charge | QGD | | 2.6 | | nC | VDS=480V, VGS=10V, ID=1.2A | 4 |
| Reverse Recovery Time | trr | | 160 | | ns | VGS=0V, IS=1.2A, dIF/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr | | 0.3 | | μC | VGS=0V, IS=1.2A, dIF/dt=100A/μs | 4 |
## CAD (KiCad official)
- Symbol: `1N60L-T92-B`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `1n60l-t92-b-etched.step` / `1n60l-t92-b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `1n60l-t92-b.step` / `1n60l-t92-b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/1n60l-t92-b-datasheet.pdf) (9 pp, sha256 `edfb82a178fee187`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/1n60l-t92-b-datasheet.pdf)