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1N60L-T92-B

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UTC(Unisonic Tech) MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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1N60L-T92-B

UTC(Unisonic Tech) · MOSFETs · TO-92

1N60L-T92-B from UTC(Unisonic Tech), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGSS limited to ±30 V and VGS(TH) of 2.0 V min to 4.0 V max at ID=250μA.
2 D passive Drain; rated for VDSS of 600 V and continuous drain current ID of 1.2 A (4.8 A pulsed).
3 S passive Source; connects to the source side of the MOSFET and its body diode, with continuous diode forward current IS of 1.2 A.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V TC=25°C 3
Gate-Source Voltage VGSS -30 30 V TC=25°C 3
Avalanche Current IAR 1.2 A TC=25°C 3
Continuous Drain Current ID 1.2 A TC=25°C 3
Pulsed Drain Current IDM 4.8 A TC=25°C 3
Single Pulsed Avalanche Energy EAS 50 mJ L=60mH, IAS=1A, VDD=50V, RG=25Ω, Starting TJ=25°C 3
Repetitive Avalanche Energy EAR 4 mJ TC=25°C 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤1.2A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C 3
Power Dissipation TO-92 PD 1 W TA=25°C 3
Junction Temperature TJ 150 °C 3
Operating Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Thermal Resistance Junction to Ambient TO-92 θJA 140 °C/W TO-92 3
Thermal Resistance Junction to Case TO-92 θJC 80 °C/W TO-92 3
Drain-Source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS=600V, VGS=0V 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 4
Static Drain-Source On-State Resistance RDS(ON) 9.3 11.5 Ω VGS=10V, ID=0.6A 4
Input Capacitance CISS 120 150 pF VDS=25V, VGS=0V, f=1MHz 4
Output Capacitance COSS 20 25 pF VDS=25V, VGS=0V, f=1MHz 4
Reverse Transfer Capacitance CRSS 3 4 pF VDS=25V, VGS=0V, f=1MHz 4
Total Gate Charge QG 5 6 nC VDS=480V, VGS=10V, ID=1.2A 4
Turn-On Delay Time tD(ON) 5 20 ns VDD=300V, ID=1.2A, RG=50Ω 4
Turn-On Rise Time tR 25 60 ns VDD=300V, ID=1.2A, RG=50Ω 4
Turn-Off Delay Time tD(OFF) 7 25 ns VDD=300V, ID=1.2A, RG=50Ω 4
Turn-Off Fall Time tF 25 60 ns VDD=300V, ID=1.2A, RG=50Ω 4
Maximum Continuous Drain-Source Diode Forward Current IS 1.2 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 4.8 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V VGS=0V, IS=1.2A 4
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.4 V/℃ ID=250μA 4
Gate-Source Charge QGS 1 nC VDS=480V, VGS=10V, ID=1.2A 4
Gate-Drain Charge QGD 2.6 nC VDS=480V, VGS=10V, ID=1.2A 4
Reverse Recovery Time trr 160 ns VGS=0V, IS=1.2A, dIF/dt=100A/μs 4
Reverse Recovery Charge Qrr 0.3 μC VGS=0V, IS=1.2A, dIF/dt=100A/μs 4

CAD (KiCad official)

  • Symbol: 1N60L-T92-B
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 1n60l-t92-b-etched.step / 1n60l-t92-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 1n60l-t92-b.step / 1n60l-t92-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 edfb82a178fee187, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF